Electrodeposition of silicon from three different ionic liquids: possible influence of the anion on the deposition process

Analysis of Cathodic Reaction Process of SiCl4during Si Electrodeposition in Ionic Liquids

“…In such Si electrodeposition processes, non-aqueous solvents are used as electrolytes because the reduction potential of Si is very negative and almost all Si precursors can easily react with water. Among the non-aqueous solvents, there have been several studies of organic solvents [1][2][3] and ionic liquids [4][5][6] because they can be used at low temperatures. Our earlier work has been on the deposition of Si from a SiCl 4 precursor, in particular, focusing on ionic liquids as the solvent and have reported the deposition of films and patterned structures.…”

“…Among the non-aqueous solvents, there have been several studies of organic solvents [1][2][3] and ionic liquids [4][5][6] because they can be used at low temperatures. Our earlier work has been on the deposition of Si from a SiCl 4 precursor, in particular, focusing on ionic liquids as the solvent and have reported the deposition of films and patterned structures. 7,8 More recent work has been focused on understanding the fundamental aspects of the deposition behavior of Si.…”

“…Focusing on the deposition behavior of Si, it has been suggested that SiCl 4 , which is one of Si precursors, is reduced in multiple stages in organic solvents and ionic liquids. [9][10][11] Previous studies have not been able to provide details on the reaction of SiCl 4 on the substrate surface at a molecular level.…”

Tetraalkylammonium Fluorosilicates as Precursors for Electrochemical Deposition of Silicon Coatings. Synthesis and Thermal Stability

“…(R 1 R 2 R 3 R 4 N) 2 SiF 6 2R 1 R 2 R 3 R 4 NF + SiF 4 ↑ The accumulation of quaternary simple fluoride during thermal decomposition is indirectly confirmed by the formation of solidified melt after the thermal analysis (Figs. 2 and 3).…”

“…Currently, there is strong interest in the use of cationic and anionic organic complexes for the production of films and coating of metals and nonmetals at relatively low temperatures (between 10 °C and 150-200 °C) [1,2].…”