Electrodeposition of Semiconductors

Determination of Internal Stress of Ni Electroplated Samples in Sulphamate Solutions

“…Hardness was improved at higher temperature deposition conditions as shown in Table 2. In this study, it was observed that increasing current efficiency and increasing temperature decreased the internal stress of the deposit which matches with the previous experiments done by Schlesinger and Paunovic [8]. There might be some differences observed.…”

“…For high quality electroplated samples, up to 100 mm thickness, the allowable stress should be ±30 MPa *8+. For decorative platings, the range is increased to 125-185 MPa according to the study by Schlesinger and Paunovic [8].…”

“…In order for decreased stress values the amount of chloride should be minimum or either zero, with this regard; experiments indicated that increasing chloride amount increases the internal stress shown as Figure 5, despite the fact that some amount of chloride ions is essential for the ductility of the deposits. According to Schlesinger and Paunovic [8], it is mentioned that 50 mg L -1 chloride is optimum for increasing the microhardness without increasing the internal stress. It is easily seen that, increasing temperature and current density increased the grain size at 5 A/dm 2 as shown in Figure 7.…”

Electrodeposition of Semiconductors in Ionic Liquids

“…In contrast to the microcrystalline element, nanocrystalline germanium is a direct semiconductor and a promising material in the optoelectronic industry. The 6 ]) ionic liquid. In situ STM was used to investigate the initial stages of the electrodeposition at room temperature.…”

“…[1][2][3][4][5][6]. Some semiconductors (e.g., Si, Ge, GaAs) can be well electrodeposited from high-temperature molten salts but the operating conditions (>800 C) make these electrolytes at least demanding.…”