Electrodeposition of Protocrystalline Germanium from Supercritical Difluoromethane

Cummings, Charles Y.; Bartlett, Philip N.; Pugh, David; Reid, Gillian; Levason, William; Hasan, Mahboba M.; Hector, Andrew L.; Spencer, Joe; Smith, David C.; Marks, Samuel; Beanland, Richard

doi:10.1002/celc.201500539

Cited by 11 publications

(8 citation statements)

References 64 publications

(54 reference statements)

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“…There are passivation processes that are limited to a few ML, but they tend to involve the oxidation of a surface, whereas Ge was formed by reduction from a HGeO 3 – solution. The amount of Ge deposited was also a function of pH, with pH 9.0 resulting in the highest Ge coverage. ,, The limited reactivity of Ge ions has been documented in studies using nonaqueous media as well. , There have been a number of studies concerning Ge electrodeposition since 1950. ,,− Among them are in situ EC-STM studies by Enders et al , in which they grew Ge in ionic liquids and nonaqueous solutions. ,, The studies presented here involved aqueous solutions, which greatly simplified the Ge deposition as highly pure water is readily available.…”

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confidence: 92%

Electrochemical Scanning Tunneling Microscopic Study of the Potential Dependence of Germanene Growth on Au(111) at pH 9.0

et al. 2017

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Germanene is a 2D material whose structure and properties are of great interest for integration with Si technology. Preparation of germanene experimentally remains a challenge because, unlike graphene, bulk germanene does not exist. Thus, germanene cannot be directly exfoliated and is mostly grown in ultrahigh vacuum. The present report uses electrodeposition in an aqueous HGeO solution at pH 9. Germanene deposition has been limited to 2-3 monolayers, thus greatly restricting many applicable characterization methods. The in situ technique of electrochemical scanning tunneling microscopy was used to follow Ge deposition on Au(111) as a function of potential. Previous work by this group at pH 4.5 suggested germanene growth, but no buffer was used, resulting in change in surface pH. The addition of borate buffer to create pH 9.0 solution has reduced hydrogen formation and stabilized the surface pH, allowing systematic characterization of germanene growth versus potential. Initial germanene nucleated at defects in the Au(111) herringbone (HB) reconstruction. Subsequent growth proceeded down the face-centered cubic troughs, slowly relaxing the HB. The resulting honeycomb (HC) structure displayed an average lattice constant of 0.41 ± 0.06 nm. Continued growth resulted in the addition of a second layer on top, formed initially by nucleating around small islands and subsequent lateral 2D growth. Near atomic resolution of the germanene layers displayed small coherent domains, 2-3 nm, of the HC structure composed of six-membered rings. Domain walls were based on defective, five- and seven-membered rings, which resulted in small rotations between adjacent HC domains.

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confidence: 92%

Electrochemical Scanning Tunneling Microscopic Study of the Potential Dependence of Germanene Growth on Au(111) at pH 9.0

et al. 2017

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“…With anionic and dianionic chlorometallate salts, the deposition of elemental Ga, In, Ge, Sn, Sb, Bi, Se, and Te was demonstrated [120]. The electrodeposition of protocrystalline Ge films onto TiN electrodes with [GeI 3 ] − as precursor was also reported by analogous means [121]. When templates such as metal coated anodic aluminium oxide membranes were used for SCFED, tellurium [122] and tin nanowires [123,124] were fabricated with a high-quality crystalline structure.…”

Section: Electrodeposition In Supercritical Fluidsmentioning

confidence: 94%

Electrochemical Approaches for the Recovery of Metals from Electronic Waste: A Critical Review

et al. 2021

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Electronic waste (e-waste) management and recycling are gaining significant attention due to the presence of precious, critical, or strategic metals combined with the associated environmental burden of recovering metals from natural mines. Metal recovery from e-waste is being prioritized in metallurgical extraction owing to the fast depletion of natural mineral ores and the limited geographical availability of critical and/or strategic metals. Following collection, sorting, and physical pre-treatment of e-waste, electrochemical processes-based metal recovery involves leaching metals in an ionic form in a suitable electrolyte. Electrochemical metal recovery from e-waste uses much less solvent (minimal reagent) and shows convenient and precise control, reduced energy consumption, and low environmental impact. This critical review article covers recent progress in such electrochemical metal recovery from e-waste, emphasizing the comparative significance of electrochemical methods over other methods in the context of an industrial perspective.

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“…In the presence of metal particles in the molten state, filamentous Ge structures grew due to the cathodic reduction of Ge-containing ions on the electrode surface, followed by dissolution and crystallization in the melt at the substrate interface [84]. [85].…”

Section: −mentioning

confidence: 99%

Electrochemical Atomic Layer Deposition (EC-ALD) Low Cost Synthesis of Engineered Materials a Short Review

2018

AMSE

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Having mastered the technology of epitaxial deposition of crystalline thin films (i.e. homo and heteroepitaxy) on crystalline substrates has already been found providing better device designs with numerous advantages in the development of microelectronics devices and circuits. Consequently, mass-scale production of epitaxial thin films could successfully be developed and used in fabricating discrete devices and integrated circuits (ICs) using silicon/compound semiconductors commercially. Especially, realizing the hetero-epitaxial interfaces possessing two-dimensional electron/hole gas (2DEG/2DHG) sheets could offer very-high electron/hole mobilities for producing high-electronmobility transistors (HEMTs) and amplifiers for microwave/millimeter-wave communication systems. However, the major limitation of this technology was its requirement of extremely high cost infrastructures. Subsequently, the rising demands of the technologies to produce large-size displays/electronics systems, and large-numbers of sensors/ actuators in Internet of Thing (IoT) made it imminent for the researchers to explore replacing the existing cost intensive technologies by more affordable ones. In such an endeavor, developing a simpler and alternate epitaxial technology became imminent to look for. Incidentally, electrodeposition based epitaxy attracted the attention of the researchers by employing potentiostatic set-up for understanding the growth kinetics of the ionic species involved. While going through these studies, starting with the deposition of metallic/semiconducting thin films, atomic-layer epitaxial depositions could be successfully made and named as electrochemical atomic layer deposition (EC-ALD). Despite numerous attempts made for almost two decades in this fascinating field the related technology is not yet ready for its commercial exploitations. Some of the salient features of this process (i.e. commonly known as EC-ALD or EC-ALE) are examined here with recent results along with future prospects. Indexing Terms: Vapor Phase Epitaxy (VPE), Liquid Phase Epitaxy (LPE), Atomic Layer Deposition, Atomic Layer Epitaxy (ALE), and Molecular Beam Epitaxy (MBE); Electrochemical Atomic Layer Deposition (EC-ALD)

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Electrodeposition of Protocrystalline Germanium from Supercritical Difluoromethane

Abstract: We report results for the electrochemistry of the germanium(II) trihalide anions,

Cited by 11 publications

References 64 publications

Electrochemical Scanning Tunneling Microscopic Study of the Potential Dependence of Germanene Growth on Au(111) at pH 9.0

Electrochemical Scanning Tunneling Microscopic Study of the Potential Dependence of Germanene Growth on Au(111) at pH 9.0

Electrochemical Approaches for the Recovery of Metals from Electronic Waste: A Critical Review

Electrochemical Atomic Layer Deposition (EC-ALD) Low Cost Synthesis of Engineered Materials a Short Review

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