Electrodeposition of magnetic thin films of cobalt on silicon

Munford, M. L.; Seligman, Laura; Sartorelli, M. L.; Voltolini, E.; Martins, L. F. O.; Schwarzacher, Walther; Pasa, A. A.

doi:10.1016/s0304-8853(01)00082-8

Cited by 25 publications

(16 citation statements)

References 8 publications

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“…The H c and M s depend strongly on the film thickness. 13,14 The H c of the Co films decreases with increasing film thickness up to a threshold value, above thickness of 15 nm. This observed low H c indicates the soft magnetic nature of thin Co films.…”

Section: Resultsmentioning

confidence: 99%

Effect of Ta buffer layer and thickness on the structural and magnetic properties of Co thin films

Vahaplar¹,

Tari²,

Tokuc³

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Single Co and Ta/Co bilayers were grown on Si͑100͒ substrates in a magnetron sputtering system. The effect of Ta buffer layer and the thickness of Co layer on the structural and magnetic properties of the Co layers has been studied. A single Co layer shows a textured structure above thickness of 40 nm according to the x-ray diffraction ͑XRD͒ pattern. The magnetic properties of Co layers depend significantly on the thickness of the films. Ta grows as highly textured ␤-Ta ͑tetragonal͒ phase on Si with a smooth surface. The XRD and atomic force microscopy results show that the Ta buffer layer improves the structural properties dramatically, resulting in a strongly textured and smoother surface morphology. The Ta layer also affects the magnetic properties of Co layers to a large extent, especially inducing an in-plane anisotropy in thin Co films.

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Section: Resultsmentioning

confidence: 99%

Effect of Ta buffer layer and thickness on the structural and magnetic properties of Co thin films

Vahaplar¹,

Tari²,

Tokuc³

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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show abstract

“…From the magnetic characterization of the Co films of various thicknesses grown on Si we observed that the H c of Co decreases from 75 to 25 Oe for 4 and 15 nm, respectively, and increases gradually after 25 nm of thickness. The H c and M s of ferromagnetic films depend strongly on the film thickness [27]. The initial decrease in H c of the thin Co layer may be associated with the formation of CoO on top of the Co film, because the magnetic effects of antioferromagnetic layers are inversely proportional with the magnetic film thickness.…”

Section: Resultsmentioning

confidence: 99%

Effect of Ta buffer layer and TaO x barrier thickness on the evolution of the structural and magnetic properties of the Fe/TaO x /Co trilayers

Tokuc

Tari

2009

Appl. Phys. A

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Fe/TaO x /Co trilayers were grown on Si(100)/SiO 2 substrates and on tantalum buffer layers by a high vacuum magnetron sputtering system. The effects of both Ta buffer layer and tantalum-oxide barrier layer thickness on the structural and magnetic properties and the coupling of the ferromagnetic layers have been studied. It was observed that Ta improves the structural properties of the Fe layer resulting in an increased coercive field. For a barrier thickness of 4 nm a weak decoupling starts to appear between the ferromagnetic layers and a clear step formation is observed with increasing thickness. The minor hysteresis loops predict an interlayer coupling for thin barriers. The annealing of trilayers up to 250°C shows an increased coercivity for only the Fe layer. Annealing further at 400°C has the opposite effect of decreasing the coercivity, indicating intermixing at the interfaces of the Fe. The refractive index of the insulator barrier shows that the barrier layer is not totally in the form of tantalum-pentoxide.

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“…[5,6] Electrochemical metal growth on silicon has also been studied by many groups, in particular to prepare diodes, [7] study the electronic properties of surfaces [8] or grow magnetic multilayers. [9] A literature survey indicates that metal electrochemical growth is three dimensional on well-defined H-Si(111) surfaces. [10][11][12][13][14] This behavior (i.e.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of Gold on HSi(111): The Determining Role of Hydrogen Evolution

Prod’homme¹,

Warren²,

Cortès³

et al. 2010

ChemPhysChem

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The potential dependence of gold electrodeposition on H-terminated Si(111) is studied in acidic electrolyte by means of atomic force microscopy and X-ray diffraction. The Au films (≤66 monolayers (ML)≈16 nm) are found to be (111)-oriented and in strong epitaxy with the Si(111) surface lattice, with two in-plane orientations separated by 180°. The deposit morphology is controlled by the deposition potential and can be islandlike or atomically flat. The flat morphology is accompanied by a preferential growth of 180°-rotated Au planes with respect to the Si bulk lattice which takes place at potentials where the hydrogen evolution reaction occurs. Obtaining ultraflat Au layers on Si(111) contrasts with the commonly observed islandlike morphology of electrodeposited films on semiconductors. This behavior is discussed in terms of a nucleation coupled with hydrogen evolution reaction (HER) and an enhanced Au adatom mobility induced by this reaction.

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Electrodeposition of magnetic thin films of cobalt on silicon

Cited by 25 publications

References 8 publications

Effect of Ta buffer layer and thickness on the structural and magnetic properties of Co thin films

Effect of Ta buffer layer and thickness on the structural and magnetic properties of Co thin films

Effect of Ta buffer layer and TaO x barrier thickness on the evolution of the structural and magnetic properties of the Fe/TaO x /Co trilayers

Epitaxial Growth of Gold on HSi(111): The Determining Role of Hydrogen Evolution

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