Electrodeposition of CuIn1−xGaxSe2 precursor films: optimization of film composition and morphology

Fernández, Arturo; Bhattacharya, R. N.

doi:10.1016/j.tsf.2004.02.104

Cited by 79 publications

(36 citation statements)

References 6 publications

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“…[28], triethanolamine [28,36], thiocyanate [37], etc., are used during the one-step electrodeposition of CIS thin-films. In addition, a supporting electrolyte such as chloride (LiCl [22,34,38,39] or NaCl [40]) or sulfate (K 2 SO 4 [41][42][43]) is added which results in an improved conductivity of the electrolyte leading to easier mobility of the precursor ions. Often amorphous or poorly crystalline CIS films were observed from electrodeposition which contains frequently degenerate Cu 2-x Se phases that are detrimental to the device performance [30,37].…”

Section: Electrodeposition Of Ternary/quaternary Chalcopyritesmentioning

confidence: 99%

“…CIGS layers generally deposited from the above mentioned electrodeposition technique often used an additional PVD step to achieve the required composition to form stoichiometric films [45,46]. Bhattacharya et al demonstrated a cell efficiency of 9.4% by using a similar PVD step to improve the composition of In and Ga in the as-deposited CIGS thin-films [39]. Valderrama et al explored a similar electrodeposition technique followed by PVD step to achieve stoichiometric chalcopyrite CIGS films and additionally demonstrated the use of CIGS films to produce hydrogen by the use of photoelectrochemical testing of the films in H 2 SO 4 [46].…”

Section: Electrodeposition Of Ternary/quaternary Chalcopyritesmentioning

confidence: 99%

Section: Electrodeposition Of Ternary/quaternary Chalcopyritesmentioning

confidence: 99%

“…Fernandez et al varied the concentration of precursor solution systematically and achieved a better control over composition and morphology of the CIGS films [39]. The presence of cracks in Ga-containing layers is often a serious problem [39,47], though it can be reduced through the use of alcohol-aqueous solutions [48] or supporting electrolytes such as LiCl or Li 2 SO 4 with gelatin as brightening additive [49]. Complexing agents such as citric acid/citrate [50,51], thiocyanate [52], sodium sulfamate [53], sulfosalicylic acid [54], etc., were often used to improve the composition and morphology of the CIGS films.…”

Section: Electrodeposition Of Ternary/quaternary Chalcopyritesmentioning

confidence: 99%

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Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

Mandati¹,

Sarada²,

Dey³

et al. 2018

Semiconductors - Growth and Characterization

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CuInSe 2 (CIS) and Cu(In,Ga)Se 2 (CIGS) semiconductors are the most studied absorber materials for thin films solar cells due to their direct bandgap and large absorption coefficient. The highly efficient CIGS devices are often fabricated using expensive vacuum based technologies; however, recently electrodeposition has been demonstrated to produce CIGS devices with high efficiencies and it is easily amenable for large area films of high quality with effective material use and high deposition rate. In this context, this chapter discusses the recent developments in CIS and CIGS technologies using electrodeposition. In addition, the fundamental features of electrodeposition such as direct current, pulse and pulse-reverse plating and their application in the fabrication of CIS and CIGS films are discussed. In conclusion, the chapter summarizes the utilization of pulse electrodeposition for fabrication of CIS and CIGS films while making a recommendation for exploring the group's unique pulse electroplating method.

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Section: Electrodeposition Of Ternary/quaternary Chalcopyritesmentioning

confidence: 99%

Section: Electrodeposition Of Ternary/quaternary Chalcopyritesmentioning

confidence: 99%

Section: Electrodeposition Of Ternary/quaternary Chalcopyritesmentioning

confidence: 99%

Section: Electrodeposition Of Ternary/quaternary Chalcopyritesmentioning

confidence: 99%

See 2 more Smart Citations

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

Mandati¹,

Sarada²,

Dey³

et al. 2018

Semiconductors - Growth and Characterization

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“…10 The most common hypothesis envisages the formation of different copper-selenium phases, followed by an incorporation of indium and gallium, 7,8,11,12 but according to the mechanism proposed by Kröger, 13 the formation of Me 2 Se 3 ͑Me = In, Ga͒ phases must also be considered because the deposition of selenium compounds occurs at potentials more positive than the deposition potential of less noble elements To our knowledge, up to now, simultaneous electrodeposition of Cu, Ga, In, and Se was investigated only for the fabrication of thin films, while in this work the extension to the fabrication of nanowires ͑NWs͒ is proposed. Only ternary chalcopyrite ͑CIS͒ NWs have been prepared by Phok et al, 14 who proposed a pulsed cathodic electrodeposition.…”

mentioning

confidence: 99%

Fabrication and Photoelectrochemical Behavior of Ordered CIGS Nanowire Arrays for Application in Solar Cells

Inguanta¹,

Livreri

Piazza³

et al. 2010

Electrochem. Solid-State Lett.

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In this work, we report some preliminary results concerning the fabrication of quaternary copper, indium, gallium, and selenium ͑CIGS͒ nanowires that were grown inside the channels of an anodic alumina membrane by one-step potentiostatic deposition at different applied potentials and room temperature. A tunable nanowire composition was achieved through a manipulation of the applied potential and electrolyte composition. X-ray diffraction analysis showed that nanowires, whose chemical composition was determined by energy-dispersive spectroscopy analysis, were amorphous. Copper indium gallium selenide ͑CIGS͒ compounds are considered among the most efficient absorber materials for solar cell applications because they show relevant advantages, such as high absorption coefficients of visible light ͑up to about 10 5 cm −1 ͒, ability to undergo bandgap engineering through alloy formation, and longterm optoelectronic stability.1,2 For these features, CIGS-based solar cells compete with poly Si-based ones, and considerable efforts have been made to developing innovative devices using these materials. The excellent performance of CIGS compounds was attributed to a hole potential barrier at grain boundaries preventing electron-hole recombination. Despite this, the region could contain many defects. According to Yan et al., 4 the superior performance of CIGS should not be explained exclusively in terms of grain-boundary behavior: They also attributed a key role to the existence of nano p-n junction networks in the entire CIGS film because of the formation of Cupoor and Cu-rich nanodomains that exhibit n-and p-type conductivities, respectively.5 To date, the best performance was obtained by the NREL group: For a single-junction CIGS solar cell ͑laboratory scale device; area: 0.42 cm 2 ͒, a conversion efficiency of more than 20% was achieved.6 This device was fabricated by a process difficult to scale up because it is based on successive deposition steps; in particular, the CIGS absorber film was produced by a three-stage coevaporation process that can severely hinder the diffusion of this device.Conversely, to make CIGS-based solar cells more attractive and competitive, low cost and easy scalability processes must be developed. In this context, electrodeposition can play a key role because it is a very simple and quick technique for obtaining good quality, large-area CIGS films compared with other fabrication methods. 7,8 A further advantage of the electrochemical route is the possibility to form homojunctions of CIGS without changing the electrolyte solution, as shown by Dharmadasa et al., 9 who also evidenced how it is possible to simultaneously control a type of electrical conduction and energy gap ͑from 1.1 to 2.2 eV͒ by changing the applied voltage.The overall reaction leading to the deposition of stoichiometric CIGS is Cu 2+ + In 3+ + Ga 3+ + 2SeO 3 2− + 12H + + 16eThe exact mechanism is not well established because it depends on the redox potential of each species, solution composition, and applied potential. 10 The...

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From the Lab to Scaling‐up Thin Film Solar Absorbers

Deligianni

Romankiw

Lincot³

et al. 2018

Advances in Electrochemical Sciences and Engineering

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Electrodeposition of CuIn1−xGaxSe2 precursor films: optimization of film composition and morphology

Cited by 79 publications

References 6 publications

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

Fabrication and Photoelectrochemical Behavior of Ordered CIGS Nanowire Arrays for Application in Solar Cells

From the Lab to Scaling‐up Thin Film Solar Absorbers

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