Electrodeposited porous and amorphous copper oxide film for application in supercapacitor

Patake, V.D.; Joshi, Shravanti; Lokhande, C.D.; Joo, Oh‐Shim

doi:10.1016/j.matchemphys.2008.09.031

Cited by 202 publications

(71 citation statements)

References 23 publications

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“…It has found potential applications in electrochemistry as an electrode material for lithium-ion batteries and electrochemical capacitors, solar energy systems, heterogeneous catalysts and selective gas sensors [13,14]. CuO is a metal oxide with encouraging redox properties, and thus thin CuO films fabricated by different techniques such as electrodeposition [15] and chemical bath deposition [16] can find certain use in supercapacitors. However, the highest specific capacitances obtained in those studies are only 37 and 43 F·g −1 , respectively [15,16].…”

Section: Introductionmentioning

confidence: 99%

“…CuO is a metal oxide with encouraging redox properties, and thus thin CuO films fabricated by different techniques such as electrodeposition [15] and chemical bath deposition [16] can find certain use in supercapacitors. However, the highest specific capacitances obtained in those studies are only 37 and 43 F·g −1 , respectively [15,16]. The low capacitances may be due to the film morphology with a poorly-accessible surface area.…”

Section: Introductionmentioning

confidence: 99%

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Effect of precipitating agent NaOH on the preparation of copper oxide nanostructures for electrochemical applications

Balasubramaniam¹,

Balakumar²

2016

Nanosystems: Phys. Chem. Math.

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Copper oxide (CuO) nanostructures with different concentrations of sodium hydroxide for electrochemical applications such as supercapacitors have been synthesized using a simple and low-cost precipitation method. X-ray diffraction pattern confirmed the formation of CuO nanostructures without any impurities and further confirmed its highly crystalline, single phase, monoclinic nature. UV-diffuse reflectance spectral (UV-DRS) studies provided the absorption edge of the material and the estimated band gap value for the nanostructures were calculated using Kubelka-Munk (KM) absorbance plot that are determined to be around 4.74 -4.84 eV. Field emission scanning electron microscopy (FESEM) investigations revealed the morphology of the copper oxide nanocrystals and showed the increment of diameter of the CuO nanostructures. The electrochemical behavior of the CuO nanostructures were investigated using electrochemical impedance spectroscopy (EIS) and cyclic voltammetry (CV) techniques which showed the stability, reversibility, symmetric and capacitive nature of the nanostructures.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of precipitating agent NaOH on the preparation of copper oxide nanostructures for electrochemical applications

Balasubramaniam¹,

Balakumar²

2016

Nanosystems: Phys. Chem. Math.

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“…Previously, Patake et al [11] have prepared porous and amorphous CuO thin films via cathodic electrodeposition method, and subsequently studied for their potential application as supercapacitor and their characteristics. Lim et al [4] studied the deposition of Cu 2 O and CuO thin films by a sol-gel spin-coating process, and enhanced the PEC performance by depositing a thin layer of NiO x co-catalyst.…”

Section: Introductionmentioning

confidence: 99%

Effect of Deposition Time on the Photoelectrochemical Properties of Cupric Oxide Thin Films Synthesized via Electrodeposition Method

Yaw

Soh

Chong

2016

MATEC Web of Conferences

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Abstract.The main aim of this study was to investigate the effect of deposition time on the physicochemical and photoelectrochemical properties of cupric oxide (CuO) thin films synthesized via electrodeposition method. Firstly, the electrodeposition of amorphous CuO films on fluorine-doped tin oxide (FTO) working electrodes with varying deposition time between 5 and 30 min was carried out, followed by annealing treatment at 500 ℃. Resultant nanocrystalline CuO thin films were characterised using field emission-scanning electron microscopy (FE-SEM), photocurrent density, and photoluminescence measurements. Through FE-SEM analysis, it was observed that the surface of thin films was composed of irregular-sized CuO nanocrystals. A smaller CuO nanocrystals size will lead to a higher photoactivity due to the increase in overall catalytic surface area. In addition, the smaller CuO nanocrystals size will prolongs the electron-hole recombination rate due to the increase in copious amount of surface defects. From this study, it was revealed that the relationship between deposition time and CuO film thickness was non-linear. This could be due to the detachment of CuO thin films from the FTO surface at an increasing amount of CuO mass being deposited. It was observed that the amount of light absorbed by CuO thin films increased with film thickness until a certain extent whereby, any further increase in the film thickness will result in a reduction of light photon penetration. Therefore, the CuO nanocrystals size and film thickness have to be compromised in order to yield a higher catalytic surface area and a lower rate of surface charge recombination. Finally, it was found that the deposition time of 15 min resulted in an average CuO nanocrystals size of 73.7 nm, optimum film thickness of 0.73 μm, and corresponding photocurrent density of 0.23 mA/cm 2 at the potential bias of -0.3 V (versus Ag/AgCl). The PL spectra for the deposition time of 15 min has the lowest rate of recombination of photogenerated electron-hole pairs by referring to its lowest PL intensity.

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“…Other known applications of CuO are in catalysts [23,24], field emission devices [25], gas sensors [26][27][28][29], photovoltaic device [30][31][32][33][34][35], superconductors [36][37][38]. Several techniques have been used to synthesis CuO.…”

Section: Introductionmentioning

confidence: 99%

Annealing effect on the optical and solid state properties of cupric oxide thin films deposited using the Aqueous Chemical Growth (ACG) method

Mammah¹,

Opara²,

Omubo-Pepple³

et al. 2013

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Thin films of CuO having an average thickness of 720 nm were deposited on clean glass substrates using the Aqueous Chemical Growth (ACG) method with Cu(NO 3 ) 2 and C 6 H 12 N 4 as precursors and annealed at different temperatures in order to determine the effect of annealing temperature on their optical and solid state properties. The study was carried out using Rutherford Backscattering (RBS) spectroscopy for t thickness and chemical composition, X-Ray Diffraction (XRD) for crystallographic structure and a UV-VIS spectrophotometer for spectral analysis. The results indicate that the absorbance and absorption/extinction coefficient of the films vary inversely with annealing temperature while the transmittance, reflectance, direct band gap, real/imaginary dielectric constants and refractive index vary directly with annealing temperature. The results further indicate an improvement in crystallinity as annealing temperature increases. The as-deposited and annealed ACG CuO thin films were found to be suitable for use as window layer in solar cells among other electronic and optoelectronic applications.

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Electrodeposited porous and amorphous copper oxide film for application in supercapacitor

Cited by 202 publications

References 23 publications

Effect of precipitating agent NaOH on the preparation of copper oxide nanostructures for electrochemical applications

Effect of precipitating agent NaOH on the preparation of copper oxide nanostructures for electrochemical applications

Effect of Deposition Time on the Photoelectrochemical Properties of Cupric Oxide Thin Films Synthesized via Electrodeposition Method

Annealing effect on the optical and solid state properties of cupric oxide thin films deposited using the Aqueous Chemical Growth (ACG) method

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