Electrodeposited magnetic layers in the ultrathin limit

Allongue, P.; Maroun, Fouad

doi:10.1557/mrs2010.505

Cited by 24 publications

(25 citation statements)

References 60 publications

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“…A close-up view of this 15-layer-thick Co film reveals narrow terraces with poorly-defined perimeters. This change in growth mode could result in variation in the magnetic property of Co thin film, as reported with Co deposited on Au (1 1 1), which exhibits a spin reorientation transition [6,21].…”

Section: In Situ Stm Imaging Of Cobalt Depositionmentioning

confidence: 71%

“…From the perspective of electrodeposition, anions in the supporting electrolyte can influence greatly the growth mode and the roughness of Co deposit, yielding unlike critical thickness for spin orientation transition and anisotropic constant, as reported with the Co/Au(1 1 1) system [6,47]. This anion effect can be important also for Co deposition on Pt(1 1 1) and will be studied.…”

Section: Atomic Structures Of the Co Deposit On Ptmentioning

confidence: 90%

“…A number of studies are reported to show that PMA arises largely from asymmetric interface, for example, involving Co deposited on Au, Pt, etc. [5][6][7][8][9]. Co deposit can be perturbed electronically by hybridization with the Pt or Au substrate to an extent significant enough to produce PMA [9,10].…”

Section: Introductionmentioning

confidence: 99%

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In situ scanning tunneling microscopy study of cobalt thin film electrodeposited on Pt(111) electrode

Kuo

Yen

Chen

et al. 2013

Electrochimica Acta

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Section: In Situ Stm Imaging Of Cobalt Depositionmentioning

confidence: 71%

Section: Atomic Structures Of the Co Deposit On Ptmentioning

confidence: 90%

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In situ scanning tunneling microscopy study of cobalt thin film electrodeposited on Pt(111) electrode

Kuo

Yen

Chen

et al. 2013

Electrochimica Acta

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“…ED requires η > 0 and is therefore also referred to as overpotential deposition (OPD). As the reaction is thermally activated, the deposition flux is given by an Arrhenius expression, F ∝ (e αzqη/kBT − 1), where q is the elementary charge and k B is the Boltzmann constant [54][55][56]. The transfer coefficient α ≈ 0.5 is related to the profile of the potential barrier across the electrolyte/substrate interface.…”

Section: Electrochemical Depositionmentioning

confidence: 99%

“…The nature of the anions may greatly influence whether and how UPD takes place [58]. Note that atomic details of ED can be observed in situ by means of electrochemical STM for both ED modes [54][55][56][57][58][59][60][61][62]. For semiconductor and oxide ED, the reader can refer to Refs [63][64][65].…”

Section: Electrochemical Depositionmentioning

confidence: 99%

Epitaxial Growth of Thin Films

Brune

2014

Surface and Interface Science

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This chapter gives an introduction to the epitaxial growth of thin films on solid substrates. The term epitaxy refers to the growth of a crystalline layer on (epi) the surface of a crystalline substrate, where the crystallographic orientation of the substrate surface imposes a crystalline order (taxis) onto the thin film. This implies that film elements can be grown, up to a certain thickness, in crystal structures differing from their bulk. If film and substrate have the same crystal lattices, but different lattice constants, the film will be under strain, that is, it will have a slightly different lattice constant than in its own bulk. Both effects, together with the electronic hybridization at the interface, lead to novel properties.One distinguishes homo-and heteroexpitaxy, where the former refers to the growth on one element on a crystal surface of its own and the latter refers to the more general case, where film and substrate materials are different. Note that the first distinguishes itself from crystal growth, as we will see in more detail later.We start this chapter by giving examples from technology, illustrating where thin epitaxial films are used and outlining potential applications that become reality once we are able to grow the respective thin film sequences. We then contrast thin film and crystal growth, respectively, with kinetics and thermodynamics of growth. We introduce the deposition techniques used in epitaxial thin film growth and then discuss the classical thermodynamic approach, which led to the definition of the growth modes. These modes refer to the morphology taken on by a system grown close to thermodynamic equilibrium. Often films are grown far away from equilibrium and their morphology is determined by kinetics, that is, it is the result of the microscopic path taken by the system during growth. This path is determined by the hierarchy of rates of the single atom, cluster or molecular precursor displacements as compared to the deposition rate. Owing to the importance of kinetics, we focus in the rest of the chapter on the kinetic description of growth. In order to simplify the topic, we start with coverages below one atomic layer that is referred to as a monolayer. The first submonolayer part will be on nucleation, followed by a discussion of island shapes that, very much like snowflakes, tell us about the elementary processes that took place during their formation. We then discuss island coarsening, either by evaporation of atoms from their edges, referred to as the Ostwald ripening, or by the diffusion and subsequent coalescence of entire islands, referred to as the

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