Electrodeposited CuSbTe thin films with enhanced thermoelectric performance

Tanwar, Amit; Kaur, Rajvinder; Padmanathan, N.; Razeeb, Kafil M.

doi:10.1039/d3se00548h

Cited by 4 publications

(2 citation statements)

References 60 publications

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“…Te3d spectrum shows that Te exists in a valence state of −2 and +4. Doublet: Te3d 5/2 peak at 572.59 eV and Te3d 3/2 peak at 582.95 eV originated from the spin orbit coupling contribute to metallic bonding present in Sb 2 Te 3 [56]. Meanwhile, Te3d 5/2 peak at 575.88 eV and Te3d 3/2 peak at 586.23 eV are ascribed to the formation of TeO 2 phase [57], which are reduced after doping.…”

Section: X-ray Photoelectron Spectroscopymentioning

confidence: 98%

Reduction of write current with improved thermal stability in GeSe₂ doped Sb₂Te₃ films for phase change memory applications

Bhatt,

Parveen,

Whab

et al. 2024

J. Phys. D: Appl. Phys.

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Chalcogenide alloy-based semiconductors have gained significant attention in recent decades due to its applications in phase change memory (PCM). Sb2Te3 has proven to be an alternative to Static and Dynamic Random Access Memory and can be a suitable candidate for commercial memory devices due to their fast switching speed. However, Sb2Te3 suffers from low amorphous phase stability and high RESET current, which needs further improvement for high power efficiency. In this work, we have prepared (Sb2Te3)1−x (GeSe2) x (x = 0.06, 0.12, 0.18, 0.24, 0.3) films to investigate their PCM properties. The films showed a rise in transition temperature to transform from high resistive amorphous (RESET) to low resistive crystalline (SET) states with doping that leads to significant enhancement in amorphous phase stability. For 30% doping of GeSe2 in Sb2Te3, the data retention temperature increases from 20.2 °C to 84.6 °C, and the resistance contrast also increases from 102 to 105. The rise in electrical resistance with doping in the amorphous as well as crystalline states leads to a drop in threshold current (I th) from 3.5 to 0.8 mA. This also reduces the RESET and SET currents. By analyzing the samples using finite element method, it was found out that the high resistance materials produce more heat, resulting in a lower write current in an energy efficient PCM device.

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Section: X-ray Photoelectron Spectroscopymentioning

confidence: 98%

Reduction of write current with improved thermal stability in GeSe₂ doped Sb₂Te₃ films for phase change memory applications

Bhatt,

Parveen,

Whab

et al. 2024

J. Phys. D: Appl. Phys.

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“…In this context, thermoelectric power generation is explored as a possible energy source. It is a method for producing electricity from the temperature difference that is available across TE devices, without affecting the environment [2,3]. They are capable of harvesting heat based on the 'Seebeck effect' .…”

Section: Introductionmentioning

confidence: 99%

Fabrication of low-cost flexible thermoelectric generator using conductive HB graphite paint operated by solar radiation

Dungani,

Anadkat,

Pandya

et al. 2024

Flex. Print. Electron.

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Paper-based flexible thin film thermoelectric generators have emerged as a promising and feasible alternative to organic and inorganic conductors due to their ability to operate at room temperature within a limited temperature range. Here, a flexible solar thermoelectric generator (STEG) designed from a single material has been introduced, prepared by a simple painting method. We prepared HB graphite-based conductive paint and demonstrated a very unique method to design flexible STEG devices. The graphite paint shows p-type semiconductive behavior, while, in conjunction with the polyethyleneimine (PEI) polymer, it acts as an n-type material. Based on the transport properties, the paint appears to be a good candidate for designing STEG devices. At room temperature, the power factor of 378 nW m-1 K-2 for p-type paint and 1.51 nW m-1 K-2 for n-type paint is obtained. In order to examine flexibility over the long term, the performance of the material was inspected through 300 repeated cycles, and transport properties (conductivity) were found to increase from 21700 S m-1 to 73500 S m-1 due to the excellent emulsifying properties of gum Arabic, which were confirmed by FESEM analysis. To evaluate the performance of the TE generator, eight pairs of p-n legs are fabricated on normal copier (80 GSM) paper, and an output voltage of ~0.1 mV K-1 (~5.5 mV) for a temperature gradient T of up to ~60 K was achieved. Further, the performance of flexible TE devices can be improved by increasing the number of thermoelectric legs and by sandwiching the device between Kapton tapes. Our work suggests a promising and simple approach to achieving cost-effective conversion of solar energy into electricity and highlights the potential of flexible STEGs for low-power applications.

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Direct synthesis of PbI2 precursor film via magnetic field- and additive-assisted electrodeposition for stable carbon-based perovskite solar cells

Aji,

Depijan,

Chunlim

et al. 2024

Journal of Alloys and Compounds

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Electrodeposited CuSbTe thin films with enhanced thermoelectric performance

Abstract: Antimony telluride (Sb2Te3) based alloys are well-known as promising thermoelectric materials for near-room temperature applications. In this work, we present a simple and cost effective electrodeposition approach for developing CuSbTe...

Cited by 4 publications

References 60 publications

Reduction of write current with improved thermal stability in GeSe₂ doped Sb₂Te₃ films for phase change memory applications

Reduction of write current with improved thermal stability in GeSe₂ doped Sb₂Te₃ films for phase change memory applications

Fabrication of low-cost flexible thermoelectric generator using conductive HB graphite paint operated by solar radiation

Direct synthesis of PbI2 precursor film via magnetic field- and additive-assisted electrodeposition for stable carbon-based perovskite solar cells

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Electrodeposited CuSbTe thin films with enhanced thermoelectric performance

Abstract: Antimony telluride (Sb2Te3) based alloys are well-known as promising thermoelectric materials for near-room temperature applications. In this work, we present a simple and cost effective electrodeposition approach for developing CuSbTe...

Cited by 4 publications

References 60 publications

Reduction of write current with improved thermal stability in GeSe2 doped Sb2Te3 films for phase change memory applications

Reduction of write current with improved thermal stability in GeSe2 doped Sb2Te3 films for phase change memory applications

Fabrication of low-cost flexible thermoelectric generator using conductive HB graphite paint operated by solar radiation

Direct synthesis of PbI2 precursor film via magnetic field- and additive-assisted electrodeposition for stable carbon-based perovskite solar cells

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Reduction of write current with improved thermal stability in GeSe₂ doped Sb₂Te₃ films for phase change memory applications

Reduction of write current with improved thermal stability in GeSe₂ doped Sb₂Te₃ films for phase change memory applications