Electrodeposited cadmium selenide films for solar cells

Electrodeposited Nanophotonics

“…It is a direct band gap semiconductor with a band gap in the visible region of the spectrum ( E g = 1.75 eV, T = 298 K). Prior work includes applications of CdSe to field-effect transistors, ,,,− solar photovoltaics, − photodetectors, ,,− and light-emitting diodes. ,, pc -CdSe nanowires were synthesized using the lithographically patterned nanowire electrodeposition or LPNE method (Figure a,b). − The process flow for the LPNE synthesis of CdSe is as follows: A nickel layer is first evaporated on a glass surface, and photoresist is deposited onto the nickel surface (Figure a,b step (i)). The nickel layer thickness will dictate the thickness of the CdSe nanowire that is electrodeposited.…”

Development of CdSe thin films for application in electronic devices

“…According to Zhao et al [1], this wide bandgap favours absorption over a 2 wide range of the visible spectrum. The deposition of CdSe thin film has been achieved using different growth methods such as pulsed laser deposition [2], thermal evaporation [3], chemical bath deposition (CBD) [2,[4][5], spray pyrolysis [6][7] and electrodeposition [8][9][10][11][12]. Among the above mentioned deposition techniques, the electrodeposition method is suitable because of its low temperature growth, its low capital cost and the ability to control the film thickness by varying the deposition time and potential.…”

Structural, optical, and electrical properties of electron beam evaporated CdSe thin films

“…The II-VI binary semiconducting compounds, belonging to the cadmium chalcogenide family (CdS, CdSe, CdTe), are considered to be very important materials for photovoltaic applications [1][2][3]. CdSe is a promising photovoltaic material because of its high absorption coefficient and nearly optimum band gap energy for the efficient absorption of light and conversion into electrical power [4].…”