Electrode dependence in halide perovskite memories: resistive switching behaviours

Abstract

Halide perovskites (HPs) are widely employed in a variety of applications including optoelectronics, lasers, light-emitting diodes, and photovoltaics. As HPs are superb semiconductors with remarkable electronic and light absorption characteristics,...

Revealing the effect of substitutional cation doping in the A-site of nanoscale APbI3 perovskite layers for enhanced retention and endurance in optoelectronic resistive switching for non-volatile bipolar memory devices

“…Considering the rotational behaviour of the A-site cation, the nanoscale thin-film recrystallized from the precursor solution could inherit local strain, which was explored using the Williamson-Hall plot. 37 Particularly, FAPI with large cationic size for FA + causes octahedral distortion, which results in local strain in the recrystallized FAPI thin films, in addition to the lattice mismatch between the nanoscale APbI 3 layer and the substrate. 38 The sudden expansion in the lattice can alter the VB and CB edges since the corner sharing PbI 6 cage contributes towards the electronic configuration.…”

“…This induced strain can alter the electronic band structure due to the overlap of lead and halide ions, which reduces the migration of ions and varies the activation of the energy barrier. 37,38 The local compressive strain induced in FAPI powders as well thin films (Fig. S2a, b and S3a, b †), can increase the formation energy of internal defects, which hinders the charge carrier mobility, [36][37][38] thereby requiring a large voltage to facilitate the formation and dissolution of the CFs.…”

“…37,38 The local compressive strain induced in FAPI powders as well thin films (Fig. S2a, b and S3a, b †), can increase the formation energy of internal defects, which hinders the charge carrier mobility, [36][37][38] thereby requiring a large voltage to facilitate the formation and dissolution of the CFs.…”

“…Therefore, in conclusion, the variation of the A-site cationic radii can affect the charge carrier mobility as well as contribute towards improving or decreasing the ion migration rate owing to the strain-induced lattice distortions in APbI 3 perovskite structure. [35][36][37][38]…”

Performance Regulation of a ZnO/WOx-Based Memristor and Its Application in an Emotion Circuit

“…With the rapid development of artificial intelligence, using actual circuits to imitate human thinking, perception, and other behaviors has gradually become a hot research direction. − As the fourth electronic component after resistance, capacitance, and inductance, memristors have many superior properties. Memristors are expected to become one of the basic components of next-generation integrated circuits. − To date, materials with resistive switching (RS) properties have been categorized into four groups: metal oxides, − two-dimensional (2D) materials, − organics, − and new materials. − Among them, the memristors made of metal oxide have superior performance and are closest to the industrial production index.…”