Electrode contacts on ferroelectric Pb(Zr<i>x</i>Ti1−<i>x</i>)O3 and SrBi2Ta2O9 thin films and their influence on fatigue properties

Lee, J. J.; Thio, C. L.; Desu, Seshu B.

doi:10.1063/1.359737

Cited by 272 publications

(142 citation statements)

References 14 publications

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“…The "capacitor" model (incorrectly) presumes that the dielectric response of the dielectric layer is not affected by the presence of the dead layer, so the system looks like capacitances in series. We show that the effective "dielectric constant" of the FE layer, ǫ f , as found in the "capacitor" model [3,4,6], is actually negative. In spite of this the system remains stable (stiffness of the domain pattern is positive).…”

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confidence: 99%

“…Here we address the anomalous behavior of the dielectric constant ǫ ef f in detail. We also discuss the important issue regarding the relation of the present results to socalled "capacitor" model [3,4,6]. The "capacitor" model (incorrectly) presumes that the dielectric response of the dielectric layer is not affected by the presence of the dead layer, so the system looks like capacitances in series.…”

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confidence: 99%

“…It has direct bearing on fatigue observed in FE capacitors since in many cases the deterioration of the switching behavior, like the loss of the coercive force and of the squareness of hysteresis loop, were attributed to the growth of a "passive layer" at the ferroelectricelectrode interface [2][3][4][5]. It is of principal importance that the presence of a dead layer, no matter how thin in comparison with thickness of the ferroelectric layer, triggers a formation of the domain structure in FE film [1].…”

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Very large dielectric response of thin ferroelectric films with the dead layers

2001

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We study the dielectric response of ferroelectric (FE) thin films with "dead" dielectric layer at the interface with electrodes. The domain structure inevitably forms in the FE film in presence of the dead layer. As a result, the effective dielectric constant of the capacitor ǫ ef f increases abruptly when the dead layer is thin and, consequently, the pattern of 180-degree domains becomes "soft". We compare the exact results for this problem with the description in terms of a popular "capacitor" model, which is shown to give qualitatively incorrect results. We relate the present results to fatigue observed in thin ferroelectric films. 77.22.Ch, 77.80.Dj, 84.32.Tt, 85.50.+k We have shown recently that the dead layer forming at the interface between ferroelectric (FE) thin film and electrodes has drastic effect on the electric response of a capacitor [1]. It has direct bearing on fatigue observed in FE capacitors since in many cases the deterioration of the switching behavior, like the loss of the coercive force and of the squareness of hysteresis loop, were attributed to the growth of a "passive layer" at the ferroelectricelectrode interface [2][3][4][5]. It is of principal importance that the presence of a dead layer, no matter how thin in comparison with thickness of the ferroelectric layer, triggers a formation of the domain structure in FE film [1]. We have shown that when the thickness of the dead layer d is not very small, the apparent (net) polarization P a of the ferroelectric with 180−degree domain walls follows an approximate relation dP a /dE ∝ ǫ g /d, which is in good correspondence with available experimental data (see e.g. [6,7] and references therein). Importantly, the response of this structure to an external bias voltage becomes more rigid when d increases, i.e. when the dead layer grows, even in the absence of pinning by defects.The implication for real systems is that with the growth of the passive layer the hysteresis loop very quickly deteriorates and looses its squareness, as observed. The approximate 1/d dependence of the response suggests that the effective dielectric constant of the capacitormay become very large when the layer is thin. Here C is the capacitance of the electroded FE film of area A, with L the separation between electrodes. Indeed, when the dead layer is thin, the domain width a becomes very large, it grows exponentially with 1/d 2 [1]. The response of this domain structure is very soft, and this should translate into very abrupt increase of the dielectric constant ǫ ef f of the capacitor. It is easy to show that in the present case (180 o domains) the linear response is not changed by electromechanical effect, the change in ǫ ef f only appearing in quadratic terms in external field, but here we are interested in zero-field value of ǫ ef f only. We have assumed a quadratic coupling between the elastic strains and the polarization (as in perovskites). In this case the linear response of 180 0 domain structure without pinning is not affected by intimate contact between th...

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Very large dielectric response of thin ferroelectric films with the dead layers

2001

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“…(1)(2)(3)(4)(5) Among the ferroelectric materials, Pb(Zr,Ti)O (PZT) is one of the best candidates for these applications owing to its high ferroelectric and piezoelectric properties. (6) In particular, its superior piezoelectricity meets the requirement for various sensors, e.g., tactile and biomass-detecting sensors.…”

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confidence: 99%

Determination of the Orientations and Microstructures of Pb(Zr,Ti)O Films Fabricated on Different Substrate Structures

2012

Sensors and Materials

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Piezoelectric (PZT) films with different orientations and microstructures were fabricated on different substrate structures in one chip. To investigate the substrate structural effect of Pb(Zr 0.52 Ti 0.48 ) films, different substrate structures of a Pt membrane and Pt on a Si substrate (called platinized Si) were fabricated after Si back-side etching. The PZT films were fabricated on the prepared substrates by RF magnetron sputtering with a single oxide target. After the annealing of a PZT film, different microstructures and Forientations were observed from different parts of the sample. The PZT film on the Pt membrane has (001) orientation and grains of ~1 µm size. On the other hand, the PZT film on platinized Si has (111) orientation and grains of ~3 µm size.

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“…However, their successful utilization in multilayer actuator applications was originally hindered in part by the decrease of remnant polarization P r during cyclic electrical or mechanical loading, known as fatigue effect [1,2]. The PZT ceramics exhibit the strong fatigue effect at high cycle numbers especially when used with metal electrodes [3,4]. The mechanisms responsible for the reduction of the polarization during cycling, albeit extensively investigated in large number of contributions [5][6][7], remain unclear.…”

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Spatial heterogeneity of piezoelectric properties in fatigued lead zirconate titanate ceramics

Zhang

Xiang-rong

et al. 2013

Phys. Status Solidi A

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A spatial non-uniformity of the switching properties during the fatigue cycling in lead zirconate titanate ceramics was investigated by a quasi-static piezoelectric and a polarization switching measurements. The agreement between the local piezoelectric properties and the switching behavior of segmented samples was demonstrated. The observed spatial variation of the properties and its evolution with cycle number provides clear evidence of the presence of heterogeneous regions that possess a local fatigue state and the local switching behavior. These results can be explained as a result of the buildup of the spatially non-uniform field and the formation of frozen domains in the ceramics during cycling. The statistical analysis of spatial variation of the switching properties and its evolution with cycle number provides the evidence that the heterogeneity of the switching properties during the fatigue cycling in lead zirconate titanate ceramics is mostly related to the non-uniform change of the local characteristic switching time.

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Electrode contacts on ferroelectric Pb(ZrxTi1−x)O3 and SrBi2Ta2O9 thin films and their influence on fatigue properties

Cited by 272 publications

References 14 publications

Very large dielectric response of thin ferroelectric films with the dead layers

Very large dielectric response of thin ferroelectric films with the dead layers

Determination of the Orientations and Microstructures of Pb(Zr,Ti)O Films Fabricated on Different Substrate Structures

Spatial heterogeneity of piezoelectric properties in fatigued lead zirconate titanate ceramics

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