“…Furthermore, the incorporation of carbon additives did not modify the optical features of the semiconductor, as detected by UV-Vis diffuse reflectance spectroscopy (Figure 2), which is expected as the WO3/carbon catalysts were prepared by physical mixture of both components. Indeed, the spectrum of WO3 presented the characteristic absorption sharp edge at 470 nm that corresponds to a band-gap of 2.6 eV, in agreement with the values reported in the literature (Kopp et al, 1977;Bullett, 1983;Svensson and Granqvist, 1984;Cotton and Wilkinson, 1988;Hjelm et al, 1996;Irie et al, 2008;Nosaka et al, 2011;Kumar and Rao, 2015). The spectra corresponding to the WO3/carbon catalysts showed similar profiles below 500 nm, with the sharp edge around 470 nm characteristic of the bare semiconductor.…”