2010
DOI: 10.1016/j.surfcoat.2010.07.088
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Electrochromic performance of reactive plasma-sputtered NiOx thin films on flexible PET/ITO substrates for flexible electrochromic devices

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Cited by 24 publications
(6 citation statements)
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“…Films prepared by wet chemical methods, on the other hand, have limited EC performance in PC/LiClO 4 because the NiO x obtained is in the normal stoichiometric ratio and has some groups on the surface due to the thermal decomposition of the nickel oxide precursor. In Table 2, we compare the performance of our NiO x NP films with those reported in the literature measured in PC/LiClO 4 solution, including those prepared by magnetron sputtering, [53][54][55] e-beam evaporation, 56 electrodeposition, 57 chemical bath deposition 58 and combustion reactions. 59 It can be seen that our NiO x films have a significant improvement over most of the NiO x films prepared by other methods, highlighting the superiority of this work and the potential for commercialisation.…”
Section: Materials Advances Papermentioning
confidence: 99%
“…Films prepared by wet chemical methods, on the other hand, have limited EC performance in PC/LiClO 4 because the NiO x obtained is in the normal stoichiometric ratio and has some groups on the surface due to the thermal decomposition of the nickel oxide precursor. In Table 2, we compare the performance of our NiO x NP films with those reported in the literature measured in PC/LiClO 4 solution, including those prepared by magnetron sputtering, [53][54][55] e-beam evaporation, 56 electrodeposition, 57 chemical bath deposition 58 and combustion reactions. 59 It can be seen that our NiO x films have a significant improvement over most of the NiO x films prepared by other methods, highlighting the superiority of this work and the potential for commercialisation.…”
Section: Materials Advances Papermentioning
confidence: 99%
“…The optimal thickness of the metal layer was found to be approximately 10 nm in recent reports. 5,12) A continuous metal layer is formed and a minimum variation in the metal sheet resistance is found when the sputtered film thickness is thicker than 10 nm. In order to increase the transmittance, the thicknesses of the bottom and the top ZnO layer were adjusted to reduce the distance of equivalent admittance (y E ) and air admittance (y 0 ).…”
Section: Film Structurementioning
confidence: 99%
“…Transparent conductive oxide (TCO) films are widely used, for example, as transparent electrodes in solar cells and in liquid crystal display panels, as gas-sensitive elements in gas detector, as electrochromic devices, as electrical conductor in energy-saving windows. [1][2][3][4][5][6] Zinc oxide (ZnO) is a multipurpose material that can demonstrate photoconductive material properties, piezoelectric, acoustic-electric effect, electro-optical effect, and other characteristics covering a wide range of applications such as photodetectors, surface acoustic wave devices, gas detectors, modulators, UV emission diodes and lasers, solar batteries, and other components and devices. ZnO is an N-type semiconductor with an energy band gap of 3.2 eV and a wurtzite crystal structure.…”
Section: Introductionmentioning
confidence: 99%
“…Farklı kalınlıklı filmlerin kimyasal birikmesinde ve yöneliminde hiç fark olmadığı ortaya çıkmıştır [31]. Reaktif plazma saçtırma tekniği ile ITO altlık üzerine büyütülen NiO filmlerde Ni +2 oranının (NiO) Li + iyonları ilave edildiğinde arttığı ve Ni+3 oranının (Ni2O3) ise Li + iyonları azaldığında arttığı gözlenmektedir [33]. Yine ITO altlık üzerine kimyasal biriktirme tekniği ile büyütülen NiO ince filmlerin FTIR ölçümlerinden bir hidroksil bandı Tablo2: ITO altlık üzerine farklı tekniklerle büyütülen NiO ince filmlerinin Raman XPS ve FTIR ölçüm sonuçları.…”
Section: Introductionunclassified