Electrochemically Induced Metal–Organic‐Framework‐Derived Amorphous V₂O₅ for Superior Rate Aqueous Zinc‐Ion Batteries

Abstract

The electrochemical performance of vanadiumoxide-based cathodes in aqueous zinc-ion batteries (ZIBs) depends on their degree of crystallinity and composite state with carbon materials. An in situ electrochemical induction strategy was developed to fabricate a metal-organic-framework-derived composite of amorphous V 2 O 5 and carbon materials (a-V 2 O 5 @C) for the first time, where V 2 O 5 is in an amorphous state and uniformly distributed in the carbon framework. The amorphous structure endows V 2 O 5 with more isotropic Zn 2+ diffusion routes and active sites, resulting in fast Zn 2+ transport and high specific capacity. The porous carbon framework provides a continuous electron transport pathway and ion diffusion channels. As a result, the a-V 2 O 5 @C composites display extraordinary electrochemical performance. This work will pave the way toward design of ZIB cathodes with superior rate performance.

Enhanced Reversible Zinc Ion Intercalation in Deficient Ammonium Vanadate for High-Performance Aqueous Zinc-Ion Battery

“…3 d. The cathodic peaks shift toward higher potential and the anodic peaks move to lower voltages because of the polarization effect. The relationship of peak currents ( i ) and sweep rate ( v ) was investigated by using the following equation [ 65 , 66 ]: where a and b are adjustable parameters. The value of b can be determined by the slope of the straight line of log i vs log v .…”

“…The cathodic peaks shift toward higher potential and the anodic peaks move to lower voltages because of the polarization effect. The relationship of peak currents (i) and sweep rate (v) was investigated by using the following equation [65,66]: In addition, the contributions of capacitive (k 1 v) and diffusion-controlled (k 2 v 1/2 ) processes could be quantitatively calculated by the current density (i) at a particular potential (V) and scan rate (v), based on the following equation [67,68]:…”

Investigation on V2O5 Thin Films for Field Effect Transistor Applications

“…e Si-MOSFET is fabricated with V 2 O 5 thin film as the gate dielectric by using PLD. It is also observed that the good I ON /I OFF current ratio is 10 6 and threshold voltage (V TH ) is 0.6 V. is I ON /I OFF ratio shows less leakage current with stable threshold voltage, and henceforth, the V 2 O 5 thin film can be a good replacement of SiO 2 in MOSFET [30][31][32][33][34][35][36].…”

Ammonium Ion and Structural Water Co‐Assisted Zn2+ Intercalation/De‐Intercalation in NH4V4O10∙0.28H2O†

“…To date, a large number of materials have been explored as ZIB cathode materials. These materials can be generally categorized into five families: (I) manganese oxides, [ 5‐10 ] (II) vanadium oxides, [ 11‐18 ] (III) Prussian blues, [ 19‐21 ] (IV) polyanion compounds, [ 22‐24 ] and (V) organic molecules/polymers. [ 25‐26 ] Among the various zinc‐ion host materials, vanadium oxides have attracted special attention owing to their high capacity as well as the rich redox chemistry and low cost of V. [ 27‐30 ] The vanadium oxides share some similarities in structure.…”