Electrochemically induced charge transfer in platinum–silicon heterosystems

Bürstel, Damian; Diesing, Detlef

doi:10.1002/pssa.201100616

Cited by 6 publications

(6 citation statements)

References 46 publications

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“…Figure 2a shows a typical CV curve measured on the NDE with a 10 nm thick Pt film in the absence of a bias voltage (V bias = 0 V). All the observed features of the CV curve correspond to those reported in the literature 39 . The cathodic current corresponding to the HER (J cell ) is clearly seen near the zero potential.…”

Section: Resultssupporting

confidence: 87%

Hot electron-driven electrocatalytic hydrogen evolution reaction on metal–semiconductor nanodiode electrodes

Nedrygailov

Moon

Park

2019

Sci Rep

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Hot electrons generated on metal catalysts influence atomic and molecular processes, leading to hot electron-driven catalytic reactions. Here, we show the acceleration of electrocatalytic hydrogen evolution caused by internal injection of hot electrons on Pt/Si metal–semiconductor electrodes. When a forward bias voltage is applied to the Pt/Si contact, hot electrons are injected. The excess energy of these electrons allows them to reach the Pt/electrolyte interface and reduce the adsorbed hydrogen ions to form H 2 (2H + + 2e − →H 2 ). We show that the onset potential of the hydrogen evolution reaction shifts positively by 160 mV while the cathodic current exhibits an 8-fold increase in the presence of hot electrons. The effect disappears when the thickness of the Pt film exceeds the mean free path of the hot electrons. The concept of a hot electron-driven reaction can lead to the development of a novel mechanism for controlling reactivity at liquid–solid interfaces.

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Section: Resultssupporting

confidence: 87%

Hot electron-driven electrocatalytic hydrogen evolution reaction on metal–semiconductor nanodiode electrodes

Nedrygailov

Moon

Park

2019

Sci Rep

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“…10 For low dose samples, these cleaning cycles reveal the voltammogram shown in Figure 4, which is similar to what is obtained on bulk platinum. 11 Most characteristically, we observe the peaks attributed to H uptake and desorption, as well as the Pt oxidation and reduction peaks. Recently, Bürstel et al reported that the voltammetric response of Pt thin films on Si was similar in shape to that of bulk Pt, both when making contact directly to the Pt film (front-contact) and when making contact to the Si substrate (back-contact).…”

Section: Resultsmentioning

confidence: 78%

“…Only recently has there been a study on the relationship between charge-transfer at the Pt/Si interface and the surface electrochemistry. 1 We present the results of an investigation into the electrochemistry of silicon with varying coverages of platinum. Rather than depositing different amounts of platinum onto silicon wafers, we instead produced continuous films, and used ionic bombardment to strip varying amounts of the metal from the surface, as shown in Figure 1.…”

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confidence: 99%

Changes in the Electrochemical Behavior of Silicon after Platinum Deposition and Ionic Bombardment

2013

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The electrochemical response of thin Pt films on Si was studied at different stages of mixing between Pt and Si, from fully segregated to fully mixed. This phase change was induced by subjecting the films to helium ion bombardment at energies in the range of 30 keV. The formation of a PtxSi phase was confirmed by XPS measurements. As the bombardment dose increases, the voltammogram peaks characteristic of bulk platinum eventually disappear, giving way to the practically featureless voltammogram of electrocatalytically inactive platinum silicide.

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“…In particular, features attributed to underpotential hydrogen adsorption, sulfate adsorption, and platinum oxidation are all recognizable. 19 Figure 4a shows cyclic voltammograms for different bombardment doses. The general shape of the voltammogram is maintained up to a dose of 3000, with only a slight decrease in the overall current density.…”

Section: Resultsmentioning

confidence: 99%

High Energy Ion Bombardment of Thin Films: From Platinum on Silicon to Platinum Silicide

Hervier¹,

Aureau²,

Woytasik³

et al. 2014

J. Electrochem. Soc.

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The effect of high energy ion bombardment on ultra-thin Pt films deposited on silicon substrates was investigated. The changes caused by the bombardment were studied using a combined characterization approach, consisting of X-Ray Photoelectron Spectroscopy (XPS) and electrochemical measurements. The chemical sensitivity of XPS helped determine locally the nature of the film after bombardment, which transitions to platinum silicide, as demonstrated by a dramatic evolution of the Pt4f and valence band spectra. Cyclic voltammetry provided the average electrochemical response of the entire sample surface (1 cm 2 ) in contact with an acidic solution. This technique is particularly sensitive to the evolution of the platinum undergoing bombardment. Initially showing a typical Pt electrochemical response, the film undergoes an irreversible transformation, leading to the absence of any metallic platinum on the surface after a sufficient bombardment dose, based on the absence of electrocatalytic activity. This study highlights the complementarity of XPS and electrochemical characterization. The platinum silicide fabrication technique described here may also be of interest for electronics applications, since platinum silicide contacts are used in a variety of thin film devices.

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Electrochemically induced charge transfer in platinum–silicon heterosystems

Cited by 6 publications

References 46 publications

Hot electron-driven electrocatalytic hydrogen evolution reaction on metal–semiconductor nanodiode electrodes

Hot electron-driven electrocatalytic hydrogen evolution reaction on metal–semiconductor nanodiode electrodes

Changes in the Electrochemical Behavior of Silicon after Platinum Deposition and Ionic Bombardment

High Energy Ion Bombardment of Thin Films: From Platinum on Silicon to Platinum Silicide

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