Electrochemically deposited Schottky contacts of In, Cd and InCd alloy

Characteristics of electrochemically deposited Nickel-cobalt-tungsten alloy semiconductor diodes

“…The substrate resistivity was of the order of 0·01 Oem. The surface preparation procedure for the silicon wafer and the experimental arrangement for the deposition of the alloy was the same as that reported earlier (Mitra et al, 1980). During the electrodeposition the silicon wafer was made the cathode and a platinum wire the anode.…”