Electrochemical, UV–Vis, and microscopical characteristics of sol–gel CeO2:V2O5 thin film

Balboni, Raphael D. C.; Lemos, Rafaela M.J.; Moura, Elton A.; Cholant, Camila M.; Azevedo, Cristiane Ferraz de; Caldeira, Izabel; Gündel, André; Flores, Wladimir Hernandez; Pawlicka, Agnieszka; Avellaneda, César O.

doi:10.1007/s10854-018-9786-5

Cited by 12 publications

(2 citation statements)

References 34 publications

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“…2 (a), (b) and (c)). The presence of the cerium dioxides peak in the XRD pattern is similar to previously reported [42]. This result indicates that cerium dopant has exceeded the solubility limit.…”

Section: Structural and Morphological Resultssupporting

confidence: 89%

Effect of (Ce, Al) co-doped ZnO thin films on the Schottky diode properties fabricated using the sol-gel spin coating

Ahmed

Meyer

Nel

2019

Materials Science in Semiconductor Processing

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Section: Structural and Morphological Resultssupporting

confidence: 89%

Effect of (Ce, Al) co-doped ZnO thin films on the Schottky diode properties fabricated using the sol-gel spin coating

Ahmed

Meyer

Nel

2019

Materials Science in Semiconductor Processing

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“…The ion transportation properties and kinetics of undoped CeO 2 and Mn‐doped CeO 2 thin‐film electrodes were studied by Nyquist plot as shown in Figure 6c. [ 47 ] At low‐frequency region, the straight could be occurred due to ionic diffusion during charging and discharging which show the ideal capacitive behavior and excellent electrochemical performance of both electrodes. At high‐frequency regions, the charge transportation process could be occurred due to the insertion of Mn into a lattice of CeO 2 thin‐film electrode which provides more active sites for electrons and electrolyte diffusion.…”

Section: Resultsmentioning

confidence: 99%

Mn Incorporated CeO₂ Lattice Endorsement of Electrochemical Performance in Symmetric Supercapacitor Device

Sharma,

Adalati,

Rani

et al. 2023

Energy Tech

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The greater charge transfer rate and variable oxidation states make cerium oxides a potential candidate to be used for energy storage application. Also, doping heteroatom in the architecture of well‐structured cerium oxide can significantly improve capacitive performance. Herein, manganese doped cerium oxide‐based nanostructured thin film is synthesized via the pulse laser deposition method for the accomplishment of the supercapacitive performance of the electrode. Due to the incorporation of Mn into the lattice of CeO2 electrode, the specific capacitance has been increased from 292 to 395 F g−1 at 2 mA cm−2 and capacitance retention also increased to 92.5% in 0.5 m Li2SO4 electrolyte solution. Later, an Mn–CeO2//Mn–CeO2@SS device is fabricated, which exhibit a specific capacitance of 85 F g−1 at 2 mA cm−2 within the working voltage window of +1.2 V. The symmetric supercapacitor (SS) device with high energy and power densities of 31 Wh kg−1 and 1673 W kg−1, respectively, also exhibits excellent cyclic retention of 87.6% even after 10 000 cycles. The Mn‐doped CeO2 symmetric supercapacitor device's electrochemical richness makes it an appropriate material for supercapacitor applications.

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Investigation of the structural and temperature-dependent electrical properties of MZnO (M = Ce and Sm) Schottky diode devices fabricated using the sol–gel spin-coating technique

Ahmed¹,

Meyer²,

Nel³

2023

J Mater Sci: Mater Electron

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In the present study, the Schottky diode devices based on Ce and Sm co-doped ZnO thin films were fabricated using the sol–gel spin-coating technique with Pd and Pt as Schottky contacts. The structural and electrical properties of the fabricated Schottky diode devices were investigated at room temperature and in the temperature range of 320–160 K. The crystalline structure of the prepared films was studied using X-ray diffraction spectroscopy. The I–V characteristics of the fabricated Schottky diode devices based on Pd and Pt Schottky contacts manifest good diode behavior with the rectification of nine and ten orders of magnitudes, respectively. The ideality factor for Pd-based Schottky diode was found to decrease with temperature, and the lowest value obtained at 160 K was 1.3, while for the Pt-based Schottky diode, the ideality factor was found to increase with decreasing temperature. Moreover, by using two Gaussian models, the barrier height for Pt Schottky diodes was found to decrease with decreasing temperature indicating the inhomogeneity in the barrier height. Furthermore, alongside the thermionic emission theory, the fabricated Schottky diode parameters were also analyzed with Cheung–Cheung and the modified Nord methods. Finally, the current transport mechanism in both fabricated Pd and Pt was found to be controlled by an Ohmic, trap-filled voltage and space-charge-limited current mechanisms in the low, moderate and higher voltage bias, respectively.

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Electrochemical, UV–Vis, and microscopical characteristics of sol–gel CeO2:V2O5 thin film

Cited by 12 publications

References 34 publications

Effect of (Ce, Al) co-doped ZnO thin films on the Schottky diode properties fabricated using the sol-gel spin coating

Effect of (Ce, Al) co-doped ZnO thin films on the Schottky diode properties fabricated using the sol-gel spin coating

Mn Incorporated CeO₂ Lattice Endorsement of Electrochemical Performance in Symmetric Supercapacitor Device

Investigation of the structural and temperature-dependent electrical properties of MZnO (M = Ce and Sm) Schottky diode devices fabricated using the sol–gel spin-coating technique

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Electrochemical, UV–Vis, and microscopical characteristics of sol–gel CeO2:V2O5 thin film

Cited by 12 publications

References 34 publications

Effect of (Ce, Al) co-doped ZnO thin films on the Schottky diode properties fabricated using the sol-gel spin coating

Effect of (Ce, Al) co-doped ZnO thin films on the Schottky diode properties fabricated using the sol-gel spin coating

Mn Incorporated CeO2 Lattice Endorsement of Electrochemical Performance in Symmetric Supercapacitor Device

Investigation of the structural and temperature-dependent electrical properties of MZnO (M = Ce and Sm) Schottky diode devices fabricated using the sol–gel spin-coating technique

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Product

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Mn Incorporated CeO₂ Lattice Endorsement of Electrochemical Performance in Symmetric Supercapacitor Device