Electrochemical Synthesis of In2Se3 Thin Films from Citrate Bath. Structural, Optical and Morphological Investigations

Dilmi, Oualid; Benaicha, Mohamed

doi:10.1134/s1023193521050049

Cited by 7 publications

(1 citation statement)

References 41 publications

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“…Nevertheless, it should be noted that the practical application for optoelectronic devices based on In 2 Se 3 material has been limited, mostly due to the lack of cost-effective and large-area thin film synthesis techniques. Many efforts and attempts have been made to achieve the growth of In 2 Se 3 thin films, such as thermal evaporation [11], chemical bath deposition (CBD) [12], electrodeposition [13], metal-organic chemical vapor deposition (MOCVD) [14], solidstate reaction (SSR) [15], molecular beam epitaxy (MBE) [16] and pulsed laser deposition (PLD) [17], etc. However, all these methods mentioned above have inevitable demerits in terms of the preparation of indium selenide thin films, for example, poor substrate adhesion, difficulties in overcoming the coexistence of different phases, or being too expensive to mass manufacture.…”

Section: Introductionmentioning

confidence: 99%

Effects of sputtering pressure and annealing temperature on the characteristics of indium selenide thin films

Zhu,

Liu,

Zheng

et al. 2023

Mater. Res. Express

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Indium selenide is a significant two-dimensional lamellar semiconductor with excellent physical properties whose enormous potential utilization in optoelectronic devices has been practically hindered by the lack of suitable thin film deposition techniques. Herein, γ-In2Se3 thin films were successfully fabricated from an InSe-target via magnetron sputtering combined with subsequent annealing process. The effects of sputtering pressure and annealing temperature on the characteristics of as-sputtered thin films were investigated. X-ray diffraction (XRD) patterns reveal that the pristine thin films are amorphous in nature, whereas transform into polycrystalline and are identified as γ-In2Se3 phase after annealing treatment. Growth mechanism of as-deposited layers combines a two-dimensional lateral growth and a three-dimensional island growth. As can be seen both from the scanning electron microscopy (SEM) figures and the atomic force microscopy (AFM) images, all samples are of uniform and compact structure with no evident holes and crevices. An UV-Vis-NIR spectrophotometer was employed to measure the optical transmittance and band gap of the synthesized thin films. The results show an obvious decrease in the band gap from 2.56 eV to 1.88 eV with annealing temperature increased from 400 ℃ to 600 ℃, respectively. In addition, the difficulty reasons for preparing monophase InSe thin films by magnetron sputtering method were discussed. These intriguing findings in this study may shed light on the growth of indium selenide thin films with well-crystallized and high quality.

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Section: Introductionmentioning

confidence: 99%

Effects of sputtering pressure and annealing temperature on the characteristics of indium selenide thin films

Zhu,

Liu,

Zheng

et al. 2023

Mater. Res. Express

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Mosaic Se/InSe Heterojunction for Self‐Powered Bipolar Photodetection

Wang,

Zhang,

Liu

et al. 2023

Advanced Optical Materials

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Broadband, sensitive, and spectrally distinctive photodetectors show great applications in multifunction optoelectronic devices, which usually integrate multiple photodetectors for distinguishing different spectra. Recently, UV‐induced photocurrent polarity‐switching in individual photoelectrochemical photodetectors (PEC PDs) has been demonstrated by tuning the interfacial physical/chemical processes. However, broadband and spectrally distinctive PEC PDs are still scarce. Here, mosaic t‐Se/InSe heterojunctions are used for designing broadband and spectrally distinctive PEC PDs. Mosaic t‐Se/InSe photoelectrodes are fabricated by one‐step electrochemical deposition with annealing treatment. t‐Se/InSe self‐powered PEC PDs show a broadband photoresponse from UV to near‐infrared (NIR). The photocurrent is negative for UV‐visible spectra and turns positive under NIR irradiation. The light‐induced photocurrent polarity‐switching originates from the competition of different redox reactions at the t‐Se/InSe photoelectrode/electrolyte interface. The responsivity is −22.5, −10.93, −4.18, and 2.48 mA W−1 for 365, 525, 630, and 850 nm light, respectively, exceeding most spectrally distinctive solid‐state PDs. The boosted photoresponse of t‐Se/InSe is attributed to the synergistic effect of stronger light absorption, faster carrier transport, and accelerated interfacial charge transfer. Moreover, the devices show great potential for applications in encrypted optical communications. This work provides a way for designing broadband and spectrally distinctive PEC PDs and demonstrates their potential applications.

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Enhanced performance of γ-In2Se3 photodetector on ITO-coated interdigital electrodes fabricated via RF-magnetron sputtering

Hase,

Prasad,

Shah

et al. 2024

J Mater Sci: Mater Electron

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Electrochemical Synthesis of In2Se3 Thin Films from Citrate Bath. Structural, Optical and Morphological Investigations

Cited by 7 publications

References 41 publications

Effects of sputtering pressure and annealing temperature on the characteristics of indium selenide thin films

Effects of sputtering pressure and annealing temperature on the characteristics of indium selenide thin films

Mosaic Se/InSe Heterojunction for Self‐Powered Bipolar Photodetection

Enhanced performance of γ-In2Se3 photodetector on ITO-coated interdigital electrodes fabricated via RF-magnetron sputtering

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