Electrochemical synthesis of hydroxyl group-functionalized PProDOT/ZnO for an ultraviolet photodetector

Abstract

Ultraviolet (UV) detectors based on zinc oxide (ZnO) nanorods (NRs) are ideal materials for UV radiation detection.

Broadening of the Response Spectrum and Gain in the Optoelectronic Performance of P3HT:PC61BM/ZnO NWs “Embedded” Heterojunction Photodetector

“…Figure a is a comparison of the XRD curves of the two PDs, where (002) and (004) correspond to the characteristic peaks of ZnO. It can be observed that the sharp peak (002) of the PDs corresponding to the C -axis orientation of ZnO is reduced to a certain extent after spin-coating P3HT:PC61BM, which is because the coverage of P3HT:PC61BM blocks a part of ZnO . Since the peak positions of the P3HT:PC61BM/ZnO NWs PD and the ZnO NWs PD are basically consistent, the P3HT:PC61BM/ZnO NWs PD was further subjected to XPS test to analyze the presence and composition of components.…”

“…It can be seen that, in addition to the obvious UV absorption edge corresponding to ZnO, after spin coating, the PD has an obvious steep absorption edge corresponding to P3HT:PC61BM. Due to the strong interaction between the chains of organics, there are two shoulder peaks in the middle of 500–600 nm, which leads to more light absorption and efficient charge transport …”

“…While the dark current has a small decrease due to the presence of p-n junction barrier. LDR is a key parameter to characterize the limited light intensity range of PDs, where responsivity remains unchanged and can be expressed as follows normalL normalD normalR = 20 nobreak0em0.25em⁢ log nobreak0em.25em⁡ I normall normali normalg normalh normalt I normald normala normalr normalk where I light and I dark are the photocurrent and dark current, respectively.…”

“…Due to the strong interaction between the chains of organics, there are two shoulder peaks in the middle of 500−600 nm, which leads to more light absorption and efficient charge transport. 7 The energy level arrangement of ZnO, P3HT, and PC61BM is shown in Figure 4b. The conduction band edge position of ZnO is about 4.2 eV.…”

“…In recent years, zinc oxide (ZnO) nanowires (NWs), especially vertical structures, − have been widely developed due to their wide band gap (3.37 eV), large specific surface area, direct electron path, high electron mobility, and excellent chemical and thermal stability. − ZnO NWs have been studied with great interest and have been widely used in solar cells, sensors, photocatalysis, and photodetectors (PDs). − Although ZnO NWs PDs have been extensively studied, their optoelectronic properties still need to be improved, and most of the responsivities are in the ultraviolet spectrum, which exhibits narrow-band absorption, and broad-spectrum detection remains to be explored.…”