We report poly͑ethyleneimine͒ ͑PEI͒ as a possible passivating agent for Ta during chemical mechanical planarization ͑CMP͒. Studies by electrochemical impedance spectroscopy in a model CMP slurry suggest that PEI forms a polymer film atop a Ta electrode, and voltammetry studies of Ta in 2.5 M HF suggest that PEI films suppress the formation of Ta oxide. Because Ta oxide is mechanically hard, suppressing Ta oxide growth may allow reduced downforce or higher removal rates. These observations are consistent with an increase of approximately 3 times in the Ta removal rate in a model CMP slurry upon addition of 3000 ppm PEI.When Cu replaced Al and W as the interconnect/via material in Si-based semiconductor devices in the late 1990s, Ta and TaN diffusion barriers were introduced between the interconnect wiring and the active device region because Cu forms a deep level defect in Si. 1,2 At that time, chemical mechanical planarization ͑CMP͒ was introduced for both Cu and Ta removal and nanoscale planarization. 3,4 Cu is easily chemically etched, so the chemical component of Cu CMP is quite substantial. Cu CMP slurries typically contain benzotriazole, which forms a passive film of the order 10 nm thick that inhibits formation of thicker Cu oxide films. 5 The formation of thick metal oxide films is widely considered to be undesirable as they likely require significant force to abrade. 6 Ta is a much more active metal than Cu, so suppressing Ta oxidation is more difficult. In addition, both Ta and the Ta native oxide ͑Ta 2 O 5 ͒ are mechanically harder than Cu and its oxide. For this reason, Ta CMP is predominantly mechanical, requiring higher downforce and/or higher abrasive concentrations than Cu CMP. The Ta native oxide can only be chemically removed in aqueous HF, 7 and Ta CMP slurries containing F ions have been developed. 8 However, polymer CMP additives that restrict the growth of Ta oxide following mechanical abrasion would be desirable. Here, poly͑eth-yleneimine͒ ͑PEI͒ is studied as a possible additive to Ta CMP slurries, with the goal being to suppress the formation of Ta oxide. PEI enhances the rate of Ta CMP, and in situ studies by electrochemical impedance spectroscopy ͑EIS͒ demonstrate that PEI forms an adherent film on Ta. It is believed that this is the first report of polymer film formation atop Ta that increases the removal rate during Ta CMP.
ExperimentalDeagglomerated ␥-alumina particles ͑50 nm diameter͒ were obtained from Buehler, whereas PEI ͑Mw 70,000 g/mol͒ was obtained from Alfa Aesar. Semiconductor grade HF ͑J.T.Baker͒ was used for all electrochemistry experiments. KClO 4 was obtained from J.T.Baker. The pH was adjusted using either potassium hydroxide ͑KOH͒ or nitric acid ͑HNO 3 ͒.All electrochemistry measurements were performed with a threeelectrode setup including a Ta rotating disk electrode ͑RDE͒, a Pt spiral counter electrode, and a saturated calomel reference electrode ͑SCE͒ controlled with an EG&G PAR model 273A potentiostat/ galvanostat. EIS was studied by coupling this potentiostat to a S...