2015
DOI: 10.1149/2.0951504jes
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Electrochemical Properties of Pt Epitaxial Layers Formed on Pd(111) in Ultra-High Vacuum

Abstract: Electrocatalytic properties for oxygen reduction reaction (ORR) of Pt(111) epitaxial layers on a Pd(111) substrate are investigated. Scanning tunneling microscopy images of the as-prepared 0.6-nm-and 1.2-nm-thick Pt(111) epitaxial layers on Pd(111) (Pt 0.6nm /Pd(111) and Pt 1.2nm /Pd(111)) revealed that the topmost surface has atomically flat, 50-100-nm-wide terraces. Remarkable current features due to hydrogen storage and emission by the Pd(111) substrate dominated the cyclic voltammograms of Pt 0.6nm /Pd(111… Show more

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Cited by 12 publications
(20 citation statements)
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References 51 publications
(81 reference statements)
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“…MLs,51,55 where similar monotonical deactivation behaviors against applied PCs are observed. On the other hand, the deactivation behaviors are markedly suppressed for the Ir-modified catalysts.…”
supporting
confidence: 61%
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“…MLs,51,55 where similar monotonical deactivation behaviors against applied PCs are observed. On the other hand, the deactivation behaviors are markedly suppressed for the Ir-modified catalysts.…”
supporting
confidence: 61%
“…30 mV positive shifts of the so-called butterfly peak [appearing at 0.8 V for Pt(111)], and the value of the positive shift corresponds to our previous studies. 21,51,55 As for the CV curve of surface Ir-modified Pt/Pd(111) (green), the butterfly peak is too unclear to discuss an onset potential shift originating from the adsorption of OH-related species on the Ir surface. 52 Regardless, the cyclic voltammograms given in Figure 2 clearly show that the electrochemical properties of the Pt(111) shell surfaces were modified, markedly, by Ir, irrespective of its location.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
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“…We choose GaN because of its excellent physical and chemical properties. It possesses unique electrical properties, low toxicity and excellent chemical stability [13,14]. In particular, wurtzite gallium nitride (GaN), with its remarkable wide direct band gap energy, extremely chemical stability in harsh environment, superior optical property and convenient controlling over its carrier concentration and conductivity type, has been recognized as an attractive candidate for light-emitting diode (LED) [15][16][17], optoelectronic devices [18], DNA biosensor [19], anion and pH selective potentiometric sensor [20,21], monitoring pH in aqueous solution and certain gases at relatively high temperatures.…”
Section: Introductionmentioning
confidence: 99%
“…5,6 In this communication, we focus on the EC stabilities of Pt/Pd(111) core-shell model structures in 0.1 M HClO 4 at 80…”
mentioning
confidence: 99%