Electrochemical Investigation of the Gallium Nitride‐Aqueous Electrolyte Interface

Kocha, Shyam S.; Peterson, M. W.; Arent, D. J.; Redwing, Joan M.; Tischler, M. A.; Turner, John A.

doi:10.1149/1.2048511

Cited by 123 publications

(110 citation statements)

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“…Its bandgap is 3.4 eV. GaN also have chemical and radiation resistance, and is therefore being considered as a stable photocatalyst in photoelectrochemical (PEC) cells for the production of fuels [14]. Colloidal QDs made from this material are expected to comprise good thermal, chemical, and radiation stability with the excellent optical properties.…”

Section: Gallium Nitride Quantum Dotsmentioning

confidence: 99%

Colloidal III–V Nitride Quantum Dots

Chen¹,

Sun²,

Guo³

et al. 2018

Nonmagnetic and Magnetic Quantum Dots

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Colloidal quantum dots (QDs) have attracted intense attention in both fundamental studies and practical applications. To date, the size, morphology, and composition-controlled syntheses have been successfully achieved in II-VI semiconductor nanocrystals. Recently, III-nitride semiconductor quantum dots have begun to draw significant interest due to their promising applications in solid-state lighting, lasing technologies, and optoelectronic devices. The quality of nitride nanocrystals is, however, dramatically lower than that of II-VI semiconductor nanocrystals. In this review, the recent development in the synthesis techniques and properties of colloidal III-V nitride quantum dots as well as their applications are introduced.

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Section: Gallium Nitride Quantum Dotsmentioning

confidence: 99%

Colloidal III–V Nitride Quantum Dots

Chen¹,

Sun²,

Guo³

et al. 2018

Nonmagnetic and Magnetic Quantum Dots

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“…Franz [23] and Keldysh [24] pointed out that a high electric field causes a redshift of the photoabsorption edge, leading to absorption of light below the bulk bandgap. Generally, a high electric field is applied to the GaN/electrolyte interface about 1.0 eV below the conduction band minimum, E C [25,26]. For example, when doping density is high, i.e., 10 18 cm -3 , the internal electric field in a thin depletion layer with width of several dozen nanometers reaches 5×10 5 V/cm.…”

Section: Possible Model Of Large Photocurrents and Redshift Of Photoamentioning

confidence: 99%

Large photocurrents in GaN porous structures with a redshift of the photoabsorption edge

Sato

Kumazaki

Kida

et al. 2015

Semicond. Sci. Technol.

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Photoresponse and photoabsorption properties of GaN porous structures were investigated by measuring photocurrent and spectroscopic photoabsorption under monochromatic light with various wavelengths. The measured photocurrents on the porous GaN electrode were larger than those on the planar electrodes due to the unique features of the former electrode, such as large surface area and low photoreflectance properties. Moreover, the photocurrents were observed even under illumination with wavelength of 380 nm, corresponding to photon energy of 3.26 eV, which is 130 meV lower than the bandgap energy of bulk GaN. A potential simulation revealed that a high electric field was induced at the pore tips due to modification of the potential in the porous structures. The observed redshift of the photoabsorption edge can be qualitatively explained by the Franz-Keldysh effect.

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“…The semiconductor for solar water splitting should have the conduction and the valence band edge positions straddled H + /H 2 and O 2 /H 2 O redox potentials. GaN has a suitable band gap position for water splitting, but it activated only by ultraviolet light irradiation [6][7][8][9][10][11][12][13][14][15]. However the band gap of the solid solutions which was formatted with InN [16][17][18][19] and ZnO [20,21] can be controlled and solar water splitting under visible light irradiation can be achieved.…”

Section: Introductionmentioning

confidence: 99%

Photoelectrochemical Properties of GaN Synthesized by the Reaction of Ga with LiNH<sub>2</sub>

Zhang

Kouyama

Miura

et al. 2011

Trans. Mat. Res. Soc. Japan

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The photoelectrochemical properties of GaN particulate film electrode on Ti substrate were investigated. GaN particulate film electrode was fabricated by means of doctor blade technique. Two kinds of method were used to improve the connection between GaN particles. One is a heat treatment of GaN particulate thin film with LiNH 2 and another one is a heat treatment with TiCl 4 . From the results of the photoelectrochemical properties, GaN electrodes showed n-type semiconducting behavior in 1.0 M HCl electrolyte under UV irradiation. The high photocurrent response was achieved in the electrode with LiNH 2 treatment and TiCl 4 treatment because of its better connection of each GaN particle.

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Electrochemical Investigation of the Gallium Nitride‐Aqueous Electrolyte Interface

Cited by 123 publications

References 0 publications

Colloidal III–V Nitride Quantum Dots

Colloidal III–V Nitride Quantum Dots

Large photocurrents in GaN porous structures with a redshift of the photoabsorption edge

Photoelectrochemical Properties of GaN Synthesized by the Reaction of Ga with LiNH<sub>2</sub>

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