Electrochemical impedance spectroscopy analysis of porous silicon prepared by photo-electrochemical etching: current density effect

Husairi, F.S.; Rouhi, Jalal; Eswar, Kevin Alvin; Zainurul, A.Z.; Rusop, M.; Abdullah, Saifollah

doi:10.1007/s00339-014-8416-1

Cited by 44 publications

(10 citation statements)

References 17 publications

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“…The effect of Al onto C si and R si as function of the annealing time is clearly seen in Figure through the reduction of the semicircle size within the region of 4–50 kΩ at the Zreal axis, which is linked with the increase of C Si and diminution of R Si (Table ), whereas at the intermediate region C HR also increase and R HR achieves its maximum value for ATSi4 sample. However, C d decreases its value in relation to the NMSi and R ct follows similar trend that of R HR , achieving its highest value for the sample annealed for 4.0 h. The increase of R ct for the ATSi samples in relation to the NMSi sample is linked to the formation of the HRL layer . Since all samples were immersed into the same electrolyte solution, the non‐constant values of C d and R ct are linked to the strong chemical modification of the silicon surface.…”

Section: Resultsmentioning

confidence: 57%

“…The curves corresponding to the ATSi samples show the presence of one more semicircle feature than in the NMSi. For the untreated sample, the Nyquist curve shows two incomplete semicircles, which is typical for semiconductor materials immersed in electrolyte because the formation of a depletion layer inside the silicon bulk and a double layer within the electrolyte bulk . The depletion layer in the semiconductor side is represented by the capacitance C Si and resistance R Si , whereas the double layer in the electrolyte side is represented by the capacitance C d and a resistance R ct .…”

Section: Resultsmentioning

confidence: 99%

“…For the untreated sample, the Nyquist curve shows two incomplete semicircles, which is typical for semiconductor materials immersed in electrolyte because the formation of a depletion layer inside the silicon bulk and a double layer within the electrolyte bulk . The depletion layer in the semiconductor side is represented by the capacitance C Si and resistance R Si , whereas the double layer in the electrolyte side is represented by the capacitance C d and a resistance R ct . The R ct resistance represents the charge transfer through the double layer and depends on the chemical properties of silicon surface and electrolyte composition .…”

Section: Resultsmentioning

confidence: 99%

“…The depletion layer in the semiconductor side is represented by the capacitance C Si and resistance R Si , whereas the double layer in the electrolyte side is represented by the capacitance C d and a resistance R ct . The R ct resistance represents the charge transfer through the double layer and depends on the chemical properties of silicon surface and electrolyte composition . For the untreated sample (NMSi), the C Si is usually much smaller than the C d and ranges between 0.001 and 1.0 mF cm −2 .…”

Section: Resultsmentioning

confidence: 99%

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Physical and Electrochemical Characterization of Crystalline Silicon Surfaces Modified by Aluminum

Huanca

Salcedo

2017

Physica Status Solidi (a)

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Crystalline silicon surfaces are modified by deposition of aluminum thin film that is sintered at 500 °C for different period of times. This treatment originates pyramidal pits and nanoparticles structures on the silicon surface. As a result, the sheet resistance of silicon surface increases. The analysis of the treated surfaces by Rutherford backscattering (RBS) and the impedance electrochemical spectroscopy (IES) reveals that, in addition to these defects, the aluminum atoms diffuse inside the silicon substrate, also contribute to the increase of the sheet resistance due to the formation of a high resistivity layer. In addition, the reflectance spectra of these samples reveal that after this treatment the complex refractive index of silicon crystal close to surface change and its surface becomes rough, as confirmed by the scanning electron microscopy (SEM). Although the higher sheet resistance of these substrates, they are more prone to be dissolved by HF attack when immersed into etchant composed by HF and HNO3, i.e., the etching rate of these samples becomes larger than in the case of the untreated substrate. This behavior is linked to the amount of oxygen incorporated within the silicon bulk during the thermal treatment.

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Section: Resultsmentioning

confidence: 57%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Physical and Electrochemical Characterization of Crystalline Silicon Surfaces Modified by Aluminum

Huanca

Salcedo

2017

Physica Status Solidi (a)

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“…In practice, there are different ways of controlling the porosity, pore size, and internal structure of pores to obtain a material with desired properties. These are, in particular, optical interferometry, photoacoustics [ 34 ], and impedancemetry [ 35 ]. Different pore types have already been described: blind, interconnected, completely isolated, and through.…”

Section: Models Of Porous Siliconmentioning

confidence: 99%

Thermal Properties of Porous Silicon Nanomaterials

Федоров

Teplinskaia

2022

Materials

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The thermal properties, including the heat capacity, thermal conductivity, effusivity, diffusivity, and phonon density of states of silicon-based nanomaterials are analyzed using a molecular dynamics calculation. These quantities are calculated in more detail for bulk silicon, porous silicon, and a silicon aerocrystal (aerogel), including the passivation of the porous internal surfaces with hydrogen, hydroxide, and oxygen ions. It is found that the heat capacity of these materials increases monotonically by up to 30% with an increase in the area of the porous inner surface and upon its passivation with these ions. This phenomenon is explained by a shift of the phonon density of states of the materials under study to the low-frequency region. In addition, it is shown that the thermal conductivity of the investigated materials depends on the degree of their porosity and can be changed significantly upon the passivation of their inner surface with different ions. It is demonstrated that, in the various simulated types of porous silicon, the thermal conductivity changes by 1–2 orders of magnitude compared with the value for bulk silicon. At the same time, it is found that the nature of the passivation of the internal nanosilicon surfaces affects the thermal conductivity. For example, the passivation of the surfaces with hydrogen does not significantly change this parameter, whereas a passivation with oxygen ions reduces it by a factor of two on average, and passivation with hydroxyl ions increases the thermal conductivity by a factor of 2–3. Similar trends are observed for the thermal effusivities and diffusivities of all the types of nanoporous silicon under passivation, but, in that case, the changes are weaker (by a factor of 1.5–2). The ways of tuning the thermal properties of the new nanostructured materials are outlined, which is important for their application.

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Investigation of thermal and electrical properties of As–Se glasses modified with Cu using DSC and AC impedance spectroscopy

et al. 2018

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Electrochemical impedance spectroscopy analysis of porous silicon prepared by photo-electrochemical etching: current density effect

Cited by 44 publications

References 17 publications

Physical and Electrochemical Characterization of Crystalline Silicon Surfaces Modified by Aluminum

Physical and Electrochemical Characterization of Crystalline Silicon Surfaces Modified by Aluminum

Thermal Properties of Porous Silicon Nanomaterials

Investigation of thermal and electrical properties of As–Se glasses modified with Cu using DSC and AC impedance spectroscopy

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