Electrochemical Growth of InSb Nanowires and Report of a Single Nanowire Field Effect Transistor

Abstract

InSb nanowires with high crystalline properties are synthesized with a diameter of 200 nm via direct current electrodeposition method inside the nanochannels of anodic alumina membranes. For the first time, the characteristics of field effect transistors based on InSb nanowires synthesized via electrochemistry is presented. A single InSb nanowire is used as a channel with gold source and drain contacts. A p ++ silicon substrate is used as the back-gate contact. Both nanowire synthesis and device fabrication are performed at room temperature and nanowire hole mobility is measured to be 57 cm 2 V −1 s −1 suggesting high structural quality of the as-grown InSb nanowires.

Electrodeposition of InSb branched nanowires: Controlled growth with structurally tailored properties

“…[11][12][13][14][15][16] For some material systems, electrodeposition can be performed at or near room temperature (RT). [17][18][19] Reasonable room temperature device performance has been demonstrated in transistors employing electrodeposited nanowires. 20 Recently, there has been a growing interest in exploring fundamental issues and technological implications of the light-matter interactions in semiconducting nanowire arrays.…”

The density functional calculations of clusters ()

“…Recent progress in unusual magnetoresistance [11] and high figure of Merit [12] of one-dimensional (1D) InSb nanostructured materials makes InSb nanowires a promising research focus. InSb nanowires have been prepared by various methods [13][14][15][16][17][18]. Moreover, InSb quantum dots are very promising candidates as active material for midinfrared light sources operating between 3 and 5 μm, also have been prepared by molecular beam epitaxy (MBE) [19][20][21].…”

Room temperature device performance of electrodeposited InSb nanowire field effect transistors

“…[9][10][11] However, repeatable growth of InSb NWs is challenging due to the difficulty in the stoichiometric growth of InSb due to vapor pressure differences of In and Sb and processing temperatures, barrier oxide layer formation around NWs and various twin defect and stacking fault formation in the structure. 17 In this letter, we report NW-FETs employing individual, electrodeposited InSb NWs with high on-current ͑I ON ϳ 40 A͒ per NW and current saturation at low drain-source ͑S/D͒ voltage ͑V ds ͒. 15 An alternative growth method uses electrodeposition of the desired ionic species into the nanochannels of a porous anodic alumina ͑PAA͒ template with approximately cylindrical pores.…”