Electrochemical etching of p-type GaN using a tunnel junction for efficient hole injection

Fiuczek, Natalia; Muzioł, G.

doi:10.1016/j.actamat.2022.118018

Cited by 6 publications

(6 citation statements)

References 23 publications

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“…For both BN layers, the refractive index for wavelengths above 500 nm may be treated as slowly varying, therefore the refractive index contrast is almost constant, at an average of 0.17. This value is on a similar level as the refractive index contrast of porous and non-porous GaN layers used in DBRs [34,35]. Furthermore, for this wavelength range, the imaginary part of the refractive index is negligible, therefore the layers may be treated as non-absorbing.…”

Section: Growing Bn Layers With High Refractive Index Contrastmentioning

confidence: 59%

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All-BN distributed Bragg reflectors fabricated in a single MOCVD process

Ciesielski,

Iwański,

Wróbel

et al. 2023

Nanotechnology

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Distributed Bragg Reflectors (DBR) are well-established photonic structures that are used in many photonic applications. However, most of the DBRs are based on different materials or require post-process etching which can hinder integration with other components in the final photonic structure. Here, we demonstrate the fabrication of DBR structures consisting only of undoped boron nitride (BN) layers with high refractive index contrast by using Metal-Organic Chemical Vapor Deposition (MOCVD). This has been achieved in a single process, without the need for any post-process etching. The difference in the refractive index of the component BN layers stems from different degrees of porosity of the individual BN layers, which is a direct result of a different growth temperature. The fabricated DBR structures consist of 15.5 pairs of BN layers and exhibit a reflectance of 87±1% at the maximum. The wavelength of maximum reflectance can be tuned from 500 nm up to the Infrared Region (IR), by simply adjusting the growth periods of subsequent BN layers. We also demonstrate that the fabricated structures can be used to create an optical microcavity. The fabricated DBRs are very promising candidates for future applications, for example in combination with single-photon emitters in h-BN, which could allow the building of a cavity-based all-BN single-photon source.

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Section: Growing Bn Layers With High Refractive Index Contrastmentioning

confidence: 59%

“…Another approach to obtain the needed reflective index contrast is to use porous structures. However, such structures require a selective post-fabrication etching process [30][31][32][33][34][35].…”

Section: Introductionmentioning

confidence: 99%

All-BN distributed Bragg reflectors fabricated in a single MOCVD process

Ciesielski,

Iwański,

Wróbel

et al. 2023

Nanotechnology

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“…The process consists, in most cases, of immersing the metal (or the semiconductor) in acid baths (electrolyte) during a specific time to create, first, porous nanostructures onto the substrate surfaces and, second, to enable the creation of a thin layer of metal oxide (by anodization) that protects and stabilizes the nanostructures [19,20]. By this, the surface area increases as the structure of the substrate is converted from 2D surfaces to 3D surfaces [123]. Conceptively, many parameters affect the process and should be controlled, e.g., the concentration of the acidic solutions, the temperature of the baths, the presence of a catalyst that has an essential role in the initiation of material nucleation (e.g., copper ions), and, finally, the thickness of the substrate.…”

Section: Surface Modificationmentioning

confidence: 99%

Recent Advances in Applied Electrochemistry: A Review

Yammine,

El-Nakat,

Kassab

et al. 2024

Chemistry

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Applied electrochemistry (AE) plays today an important role in a wide range of fields, including energy conversion and storage, processes, environment, (bio)analytical chemistry, and many others. Electrochemical synthesis is now proven as a promising pathway to avoid all disadvantages in terms of high energy consumption and high pollution, while electrochemical modeling becomes a powerful tool to understand complex systems and predict and optimize the electrochemical devices under various conditions, which reduce study time and cost. The vital role of electrochemistry will greatly be considered in the upcoming years, aiming to reduce carbon footprints and supporting the transition towards a green and more sustainable energy framework. This review article summarizes the recent advances in applied electrochemistry. It shows how this field has become an indispensable tool for innovation, progress, problem-solving in the modern world, and addressing societal challenges across diverse fields.

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“…Pasayat et al reported the top-down porosity analysis of different matrices by transimission electron microscopy (TEM), which proved that consistent pore distribution is expected to achieve uniform stress relaxation on the sample surface [55]. Fiuczek et al reported that a p-type GaN controlled ECE method using tunnel junction as a cap is to ensure stable, efficient and controllable hole injection in p-type semiconductors [56].…”

Section: Development Of Np-ganmentioning

confidence: 99%

The development and applications of nanoporous gallium nitride in optoelectronics: a review

Ying

Liang

Guo

et al. 2023

Semicond. Sci. Technol.

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The development of nanoporous gallium nitride has widened the material properties and applications in third generation semiconductor area. Nanoporous gallium nitride has been used in laser emitters, light-emitting diodes, optical sensors, and optical energy storage devices. In this paper, we reviewed the most recent progress in the nanoporous GaN field by electrochemical etching. The properties of etched GaN have many superior properties compared with original GaN templates, such as stronger photoluminescence intensity, thermal conductivity, piezo-electricity, more accessible area, stress relief and refractive index. These advantages will make GaN more widely used in the field of optics and optoelectronics. Pore formation can be controlled by adjusting the applied potential and etching time. The nanoporous GaN makes the material of GaN have broader application prospects. We introduced in detail the application prospects of different GaN based processes and subsequent application methods in optoelectronics, sensors, and materials themselves. This review will help to improve further development of nanoporous GaN applications.

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Electrochemical etching of p-type GaN using a tunnel junction for efficient hole injection

Cited by 6 publications

References 23 publications

All-BN distributed Bragg reflectors fabricated in a single MOCVD process

All-BN distributed Bragg reflectors fabricated in a single MOCVD process

Recent Advances in Applied Electrochemistry: A Review

The development and applications of nanoporous gallium nitride in optoelectronics: a review

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