1984
DOI: 10.1149/1.2115574
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Electrochemical Deposition of Conducting Ruthenium Oxide Films from Solution

Abstract: Components 2'Ale hem. shift (ppm) Conc (m/o) A1Ch .2THF 64 56 AICI4-103 44 Original components: 1.3 tool liter-~ A1Cls + 0.3 real liter --1 LiA1H~ h'l THF.Table IV. Concentration of species in the replenlshed bath Components ~A1 chem. shift (ppm) Concentration (m/o) A1Cls 9 2THF 64 74 I 38 A1HC12 9 2THF 76 L. 86 AICh-103 22 AII-ICIs-114 4 * Electrochemical Society Active Member.

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Cited by 19 publications
(8 citation statements)
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“…In these measurements, the presence of a finite resistance (>2500 Ω) in parallel with the capacitance suggests that the interface undergoes relaxation processes at very low frequencies. The physical origin of this resistance is not well understood, but other researchers have attributed similar behavior in porous solids to transmission line characteristics. ,, The deeper that ions penetrate into the pores, the larger the contribution of the resistive component of the transmission line network. Rather than derive an expression for this network, we have decided to express the resistive contributions associated with the transmission line model as a single quantity to better determine the influence of this resistance on the energy storage characteristics of the material.…”
Section: Resultsmentioning
confidence: 99%
“…In these measurements, the presence of a finite resistance (>2500 Ω) in parallel with the capacitance suggests that the interface undergoes relaxation processes at very low frequencies. The physical origin of this resistance is not well understood, but other researchers have attributed similar behavior in porous solids to transmission line characteristics. ,, The deeper that ions penetrate into the pores, the larger the contribution of the resistive component of the transmission line network. Rather than derive an expression for this network, we have decided to express the resistive contributions associated with the transmission line model as a single quantity to better determine the influence of this resistance on the energy storage characteristics of the material.…”
Section: Resultsmentioning
confidence: 99%
“…Various methods, such as solution chemistry techniques [1,7], electrochemical deposition [1,[7][8][9][10][11][12][13][14][15][16][17][18][19][20][21], sputtering techniques [6,7], and organometallic chemical vapor deposition [22] have been employed to prepare ruthenium oxide films. The electrodeposition methods offer a number of advantages compared with other techniques.…”
Section: Introductionmentioning
confidence: 99%
“…Electrodeposition methods for preparing ruthenium oxide films, including cathodic [8][9][10][11][12][13][14][15], anodic [16] and cyclic voltammetric (CV) depositions [17][18][19][20][21] have been widely studied. * Corresponding author.…”
Section: Introductionmentioning
confidence: 99%
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“…Early examples of the ED of oxyhydroxides involved the anodic deposition of aqueous solution species, most commonly containing transition metal 2+ cations (M 2+ ), onto conductive metal substrates under potentiostatic control to generate oxide thin films for (photo)electrocatalysis applications. [27,28] Cathodic ED is facilitated by pH changes local to the working electrode (WE) due to the hydrogen evolution reaction (HER) increasing the concentration of hydroxide ions, which subsequently react with M 2+ to precipitate and deposit metal hydroxide species, M(OH) 2 , as thin films which can be further oxidised to the desired metal oxide. [29][30][31][32] Homogeneous cathodic deposition of the (oxyhydr-)oxide is only achieved provided that the reduction potential of M 2+ /M 0 is sufficiently more negative than that of H + /H 2 , otherwise the metallic form, M 0 , would be formed before the formation of the and/or CuO over Au surfaces.…”
Section: Electrodeposition Of Nanostructured Thin-film Metal Oxidesmentioning
confidence: 99%