2005
DOI: 10.1007/s00339-005-3243-z
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Electrochemical deposition and characterization of Cu2O nanowires

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Cited by 48 publications
(31 citation statements)
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“…Most initial work on producing nanostructured semiconductors (e.g. ZnO, TiO 2 , Cu 2 O) using AAO templates utilized thin, unsupported templates poorly suited for device fabrication [47,90,[92][93][94][95]. A metal film was typically deposited on one side of the template to act as the conducting electrode at the base of the nano-sized pores.…”
Section: Template-assisted Synthesis Of Ultra-low-cost Photovoltaic Nmentioning
confidence: 99%
“…Most initial work on producing nanostructured semiconductors (e.g. ZnO, TiO 2 , Cu 2 O) using AAO templates utilized thin, unsupported templates poorly suited for device fabrication [47,90,[92][93][94][95]. A metal film was typically deposited on one side of the template to act as the conducting electrode at the base of the nano-sized pores.…”
Section: Template-assisted Synthesis Of Ultra-low-cost Photovoltaic Nmentioning
confidence: 99%
“…Thus, the consumption and subsequent supply of OH − in the interface occurs stably along the solution/solid interface, leading to the formation of a uniform and smooth layer. Liu and Zhou have reported that the diffusion rate of OH − in AAO nanochannels is slower than that on a flat substrate for the deposition of Cu 2 O nanowires [15]. Considering the very small path and high aspect ratio in the nanochannels, the diffusion and mass transport of OH − is limited.…”
Section: Resultsmentioning
confidence: 99%
“…These factors include temperature, flow rate of the carrier gas, precursor concentration, operation pressure, and the growth time; the size of the particles can be altered by changing the temperature, the flow rate of the carrier gas, and the precursor nuclei concentration (Maisels et al, 2000;Ohno, 2002;Wegner et al, 2002;Kim et al, 2004;Simchi et al, 2007). In addition, the rate of production of nanoparticles can be dramatically increased when the synthesis reactor is operated at a higher pressure, with correspondingly shorter growth times.…”
Section: Vapor Phase Reactionmentioning
confidence: 98%