Electrochemical degradation of methyl red in zinc hydroxide and zinc oxide thin films, physical and chemical activation

Al‐Bataineh, Qais M.; Aljarrah, Ihsan A.; Telfah, Ahmad

doi:10.1016/j.matchemphys.2022.125793

Cited by 18 publications

(7 citation statements)

References 90 publications

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“…4f illustrates the shifts in the conduction bands (CB) toward less negative potential as well illustrates the shifts in the valance bands (VB) toward less positive potential in the annealed films compared to the as-prepared one. In addition, the as-prepared (Cu-Ni)/ ZnO film has higher Urbach energy, which means higher disorder, indicating a higher existence of H shallow donor defects [19]. However, Urbach energies of the annealed films under vacuum and argon atmospheres have similar and lowest values compare to the others, indicating lowest H shallow donor defects.…”

Section: Resultsmentioning

confidence: 89%

“…2a). Annealing (Cu-Ni)/ZnO film at 500 °C in different environments reduces the H impurities [33]. However, the existence of bending O−H bonds and stretching ZnO ∶ H bonds in the annealed films suggests the existence of hydrogen shallow donors in the (Cu-Ni)/ZnO films, that bounds to the oxygen vacancy ( H O ) [34].…”

Section: Resultsmentioning

confidence: 99%

“…(036-1451) [12]. Annealed films under vacuum, nitrogen, and argon atmospheres were led to enhance the crystallinity degree due to reducing the H-containing defects in the films [19].…”

Section: Resultsmentioning

confidence: 99%

“…A. Ahmad et al [19] stated that the films prepared by sol-gel synthesis technique using zinc acetate dehydrated, ethanol, and ethanolamine are amorphous zinc hydroxide ( Zn(OH) 2 ), while the same film annealing at temperatures above 300 °C was transformed into crystalline zinc oxide (ZnO). However, G. Alvin Shi et al [20] show that annealing ZnO films near 400 °C have H-containing defects that have the role as shallow donors.…”

Section: Introductionmentioning

confidence: 99%

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Hidden impurities in transparent conducting oxides: study of vacancies-related defects and impurities in (Cu–Ni) co-doped ZnO films

et al. 2022

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The effect of hydrogen and nitrogen impurities on the physical properties of transparent conductive oxides is investigated in this study. Therefore, 5 wt.% of copper and 5 wt.% of nickel co-doped zinc oxide ((Cu–Ni)/ZnO) films were prepared using the sol–gel method. The (Cu–Ni)/ZnO films were annealed in an oven at 500 °C for 2 h under air, vacuum, nitrogen, and argon atmospheres. The synthesized zinc hydroxide film was transformed to zinc oxide film during the annealing by evaporating $${\mathrm{H}}_{2}\mathrm{O}$$ H 2 O . Films annealed under the mentioned atmosphere including as-prepared one were characterized by analyzing with UV–Vis and FTIR spectra in addition to the 2D mapping electrical conductivity of the surface measured by the 4-point probe. The annealed films under air, vacuum, and argon atmospheres led to generate H-related impurities bounded to the oxygen vacancy ($${\mathrm{H}}_{\mathrm{O}}$$ H O ) which they act as shallow donor defects resulting in forming (Cu–Ni)/ZnO films into n-type materials. Whereas, the film annealed under a nitrogen atmosphere has N-related defects bounding to the zinc vacancy ($${\mathrm{N}}_{\mathrm{Zn}}$$ N Zn ) which they act as shallow acceptor defects resulting in transforming the film from n-type to p-type. These defects affect the optical, electrical, and optoelectronic properties of the (Cu–Ni)/ZnO films.

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Section: Resultsmentioning

confidence: 89%

Section: Resultsmentioning

confidence: 99%

“…(036-1451) [12]. Annealed films under vacuum, nitrogen, and argon atmospheres were led to enhance the crystallinity degree due to reducing the H-containing defects in the films [19].…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Hidden impurities in transparent conducting oxides: study of vacancies-related defects and impurities in (Cu–Ni) co-doped ZnO films

et al. 2022

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“…More important, hydrogen-related shallow donor defects with multiple O-H bonds in a zinc vacancy in the form of H O are expected to play an essential role in the physicochemical properties of the metal oxide nanostructures [29]. According to our published article, the formation and dissociation of the O-H bonds depend on the annealing temperature and time [30]. According to C. Van de Walle's study [31], the H þ ions have a low enough formation energy to induce their high solubility in ZnO due to the great strength of the O-H bond.…”

Section: Chemical Structurementioning

confidence: 99%

Effect of hydrogen-related shallow donor on the physical and chemical properties of Ag-doped ZnO nanostructures

Al‐Bataineh

Ababneh

Bahti

et al. 2022

J Mater Sci: Mater Electron

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Silver-doped zinc oxide nanostructures (Ag/ZnO NSs) with Ag content of 0 wt%, 5 wt%, 10 wt%, and 20 wt% were synthesized using a hydrothermal technique. The prepared nanostructures were annealed at 500 °C for 2 h. The samples were characterized by using scanning electron microscopy, FTIR, X-ray diffraction (XRD), and electrical conductivity. FTIR spectra confirms the presence of hydrogen-related shallow donor defects in the Ag/ZnO NSs, which bind to the oxygen vacancy ($${\text{H}}_{\text{O}}$$ H O ) and consequently plays a significant role in the physicochemical properties of the metal oxide nanostructures. The $${\text{H}}_{\text{O}}$$ H O defects are blended to O- and Zn-polar Ag-doped ZnO NSs, depending on their polarity. XRD results verified that Ag/ZnO NSs have a polycrystalline hexagonal structure. Williamson–Hall methods were used to estimate the microstructural properties of polycrystalline nanostructures. The electrical conductivity increased from 0.60 to 1.10 µS/cm, and the bandgap energy decreased from 3.36 to 3.10 eV by increasing the Ag from 0 wt% up to 20 wt%.

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Self‐cleaning antireflected surfaces based on treated PEO/SiO₂ nanocomposite films

Ahmad,

Al‐Bataineh,

Bani‐Salameh

et al. 2024

J of Applied Polymer Sci

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In this study, the polyethylene oxide (PEO)/SiO2 nanoparticles (NPs) nanocomposite films with various SiO2 NPs concentrations were prepared using an in situ formation of NPs in the polymer matrix for self‐cleaning antireflected surface applications. The effect of SiO2 NPs in PEO/SiO2 NPs nanocomposite films on the structural, morphological, chemical, thermal, optical, and electrical properties of PEO/SiO2 NPs nanocomposite films was performed. According to the x‐ray diffraction and the differential scanning calorimetry analysis, the crystallinity degree of the nanocomposite films decreases by increasing the SiO2 NPs concentrations. The bandgap energy of PEO/SiO2 NPs nanocomposite films decreases from 3.95 to 3.55 eV as the SiO2 NPs concentration increases up to 10 wt.%. The average electrical conductivity of the PEO/SiO2 NPs nanocomposite films increases from 5.1 × 10−7 to 2.0 × 10−6 S/cm as the SiO2 NPs concentration increases up to 10 wt.%. The refractive index decreases to 1.64 at 550 nm for the PEO/SiO2 NPs nanocomposite films with 10 wt.% of SiO2 NPs, and the water contact angle decreases to around 0° after thermal treatment, which confirms that the PEO/SiO2 NPs nanocomposite films can be used as self‐cleaning antireflected surfaces.

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Electrochemical degradation of methyl red in zinc hydroxide and zinc oxide thin films, physical and chemical activation

Cited by 18 publications

References 90 publications

Hidden impurities in transparent conducting oxides: study of vacancies-related defects and impurities in (Cu–Ni) co-doped ZnO films

Hidden impurities in transparent conducting oxides: study of vacancies-related defects and impurities in (Cu–Ni) co-doped ZnO films

Effect of hydrogen-related shallow donor on the physical and chemical properties of Ag-doped ZnO nanostructures

Self‐cleaning antireflected surfaces based on treated PEO/SiO₂ nanocomposite films

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Electrochemical degradation of methyl red in zinc hydroxide and zinc oxide thin films, physical and chemical activation

Cited by 18 publications

References 90 publications

Hidden impurities in transparent conducting oxides: study of vacancies-related defects and impurities in (Cu–Ni) co-doped ZnO films

Hidden impurities in transparent conducting oxides: study of vacancies-related defects and impurities in (Cu–Ni) co-doped ZnO films

Effect of hydrogen-related shallow donor on the physical and chemical properties of Ag-doped ZnO nanostructures

Self‐cleaning antireflected surfaces based on treated PEO/SiO2 nanocomposite films

Contact Info

Product

Resources

About

Self‐cleaning antireflected surfaces based on treated PEO/SiO₂ nanocomposite films