Electrochemical and solid state reactions of copper with n‐SnS<sub>2</sub>

Jaegermann, Wolfram; Ohuchi, F. S.; Parkinson, B. A.

doi:10.1002/bbpc.19890930107

Cited by 19 publications

(2 citation statements)

References 18 publications

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“…Cu + diffused up through the SnS 2 layer to the surface of the film. Such facile Cu + diffusion in SnS 2 has been observed before and is consistent with the disappearance of the Cu 2 S peaks in the XRD spectrum for the 167Cu 2 S/800SnS 2 bilayer (Figure ). For the surface of the film, the Cu atomic concentration based on Sn was estimated to be 10% by the standard CasaXPS procedure using core level Cu 2p and Sn 3d lines.…”

Section: Resultssupporting

confidence: 89%

Atomic Layer Deposition of the Quaternary Chalcogenide Cu₂ZnSnS₄

et al. 2012

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Atomic layer deposition (ALD) is a layer-by-layer synthesis method capable of depositing conformal thin films with thickness and compositional control on subnanometer length scales. While many materials have been synthesized by ALD, the technologically important metal sulfides are underexplored, and homogeneous quaternary metal sulfides are absent from the literature. We report an ALD process to synthesize Cu 2 ZnSnS 4 (CZTS), a potentially low cost semiconductor being explored for photovoltaic applications. Two strategies are reported: one in which a trilayer stack of binary metal sulfides (i.e., Cu 2 S, SnS 2 and ZnS) is deposited and mixed by thermal annealing, as well as a supercycle strategy that is similar to the conventional ALD procedure for forming nanolaminates. Both routes rely on the facile solid state diffusion of chalcogenides for mixing. For this ALD route to the CZTS system, the challenges are nucleation, ion-exchange between the film and the volatile chemical precursors, and phase-stability of binary SnS 2 . The thin films were made with no sulfurization step. The X-ray diffraction and Raman spectra were consistent with the formation of CZTS. X-ray fluorescence measurements revealed that the films contained the expected amount of sulfur based on the target oxidation states. Photoelectrochemical measurements under simulated AM1.5 illumination using Eu 3+ as an electron acceptor demonstrated that the films were photoactive and had an average internal quantum efficiency (IQE) of 12%.

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Section: Resultssupporting

confidence: 89%

Atomic Layer Deposition of the Quaternary Chalcogenide Cu₂ZnSnS₄

et al. 2012

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“…3,4 Monovalent atoms adsorbed on the van der Waals planes of single crystals are intercalated and the intercalation phases can be characterized in situ with the use of surface science techniques in UHV. [5][6][7] In spite of the intensive studies the intercalation pathway and transport mechanism of the atoms after adsorption had not been determined so far. In principle, the mechanism of intercalation may occur either by the direct transport via tetrahedral holes through the van der Waals layers, 6 or by crossing the van der Waals planes via defects or dislocations.…”

Section: Introductionmentioning

confidence: 99%

Na and Cl₂ Interaction on it and 2H–TaSe₂(0001) Surfaces

et al. 1998

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In this paper we study the interaction of Cl2 and Na on 1T-TaSe2 and 2H-TaSe2(0001) surfaces in the temperature range of 100-300 K. The experiments are performed in UHV with the use of LEED and SXPS by synchrotron radiation measurements. Deposition of Na on Cl2-covered 1T-TaSe2 at 100 K forms initially a Na-Cl − 2 , which with increasing temperature to 300 K leads to NaCl formation. Adsorption of Cl2 on Na-intercalated 1T and 2H-TaSe2 surfaces at 100 K forms Cl2 multilayers. The first Cl2 layer, in contact with the substrate, interacts with the Na near the surface and forms Na-Cl − 2 . Warming up to 300 K leads to partial desorption of Cl2, while the remaining chlorine interacts strongly with Na, causing the deintercalation of Na to the surface in the tendency to form NaCl. The intercalation-deintercalation process takes place across the van der Waals planes and it is much faster on 2H than on 1T-TaSe2, which is attributed to the different crystal structure of 2H and 1T of TaSe2.

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Strukturelle, elektronische und magnetische Eigenschaften komplexer intermetallischer Verbindungen Progress Report

Häfner

1992

Ber Bunsenges Phys Chem

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Crystal Structure J Electronic Structure /Glasses J Intermetallic Compounds J Liquids J QuasicrystalsIn recent years, the theory of alloys has progressed on three different levels. On the first level, favoured by physicists, the properties of alloys are calculated by solving the Schrodinger equation in the local-spindensity (LSD) approximation. Given the high accuracy that is required, such calculations can be performed only for systems with a maximum of hundred nonequivalent atomic sites, even on the most powerful computers. On the second level, chemists describe bonding in terms of the 0, TI and 6 transfer integrals resulting from the angular-dependent valence orbitals. Chemical intuition allows to introduce simplifications, and at the reduced accuracy of a Tight-Binding-Huckel equation, systems with up to a few thousand atoms may be modelled quite successfully. The third level corresponds to the reasoning traditional in metallurgy: atoms are considered as soft spheres interacting through pair -or embedded-atom potentials. The simplicity of the interatomic force law allows to simulate the properties of ensembles with up to a hundred thousand atoms. -Progress on all three levels will be illustrated at the example of crystalline and liquid Zintl phases, of crystalline and amorphous magnetic alloys, and of quasicrystalline alloys.

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Electrochemical and solid state reactions of copper with n‐SnS₂

Cited by 19 publications

References 18 publications

Atomic Layer Deposition of the Quaternary Chalcogenide Cu₂ZnSnS₄

Atomic Layer Deposition of the Quaternary Chalcogenide Cu₂ZnSnS₄

Na and Cl₂ Interaction on it and 2H–TaSe₂(0001) Surfaces

Strukturelle, elektronische und magnetische Eigenschaften komplexer intermetallischer Verbindungen Progress Report

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Electrochemical and solid state reactions of copper with n‐SnS2

Cited by 19 publications

References 18 publications

Atomic Layer Deposition of the Quaternary Chalcogenide Cu2ZnSnS4

Atomic Layer Deposition of the Quaternary Chalcogenide Cu2ZnSnS4

Na and Cl2 Interaction on it and 2H–TaSe2(0001) Surfaces

Strukturelle, elektronische und magnetische Eigenschaften komplexer intermetallischer Verbindungen Progress Report

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Electrochemical and solid state reactions of copper with n‐SnS₂

Atomic Layer Deposition of the Quaternary Chalcogenide Cu₂ZnSnS₄

Atomic Layer Deposition of the Quaternary Chalcogenide Cu₂ZnSnS₄

Na and Cl₂ Interaction on it and 2H–TaSe₂(0001) Surfaces