Electroabsorption Effect of GaInNAs in Waveguiding Structure

Hashimoto, Junichi; Koyama, Kenji; Ishizuka, Takashi; Tsuji, Yasuhidé; Fujii, Keiji; Yamada, Takashi; Katsuyama, T.

doi:10.1143/jjap.48.122403

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2013

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“…The first report of active electro-absorption modulation in a 1150nm operating GaInNAs/GaAs quantum well pin diode was presented in 2002 [14], shortly after which an study using both GaInNAs/GaAs and GaInNAsSb/GaAs alloys has extended to the 1300-1600nm wavelength range [15] [16]. These reports demonstrate the attractiveness of these alloys for modulation applications whilst exploiting standard quantum well (QW) structures.…”

Section: Introductionmentioning

confidence: 95%

Quantum Confinement Stark Effect of Different Gainnas Quantum Well Structures

Qiu

Lü

Calvez

2013

AMR

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The quantum confinement Stark effect of three types of GaInNAs quantum wells, namely single square quantum well, stepped quantum wells and coupled quantum wells, is investigated using the band anti-crossing model. The comparison between experimental observation and modeling result validate the modeling process. The effects of the external electric field and localized N states on the quantized energy shifts of these three structures are compared and analyzed. The external electric field applied to the QW not only changes the potential profile but also modulates the localized N states, which causes band gap energy shifts and increase of electron effective mass.

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Section: Introductionmentioning

confidence: 95%