Electro-Thermal Transport in Silicon and Carbon Nanotube Devices

Abstract

Summary. This work examines electro-thermal transport in silicon devices and in single-wall carbon nanotubes (SWNTs). Non-local transport is found to strongly affect heat generation in quasi-ballistic silicon devices. Under such conditions, Joule heat is mainly dissipated in the drain region, and increasing power densities may lead to phonon non-equilibrium. Significant current degradation is observed in suspended SWNTs, which is attributed to the presence of hot optical phonons and to a decrease in thermal conductivity (as ~1/T) at high temperature (T) under self-heating. The high temperature thermal conductivity can then be extracted by using the high bias characteristics of suspended SWNTs.

Simultaneous Improvement on Strength, Modulus, and Elongation of Carbon Nanotube Films Functionalized by Hyperbranched Polymers

“…Carbon nanotubes (CNTs) possess high thermal conductivity (3600 W·m/K room temperature), electrical conductivity (2 × 10 5 S/m), , tensile strength (up to 100 GPa), and modulus (up to 1 TPa) . However, CNT macrostructures (films and yarns) have achieved only a very small fraction of these intrinsic properties , due to the low load transfer and weaker interaction between carbon nanotubes. , An effective approach to improvement of the load transfer between CNTs is grafting chemical bonding between the nanotubes , to replace the weak van der Waals force with stronger chemical bonds.…”

“…Carbon nanotubes (CNTs) possess high thermal conductivity (3600 W•m/K room temperature), 1 electrical conductivity (2 × 10 5 S/m), 2,3 tensile strength (up to 100 GPa), and modulus (up to 1 TPa). 4 However, CNT macrostructures (films and yarns) have achieved only a very small fraction of these intrinsic properties 5,6 due to the low load transfer and weaker interaction between carbon nanotubes.…”