Electro-Thermal Simulation &amp; Characterization of a Microheater for SMO Gas Sensors

Lahlalia, Ayoub; Neel, O. Le; Shankar, Ravi; Kam, Shian Yeu; Filipovic, Lado

doi:10.1109/jmems.2018.2822942

Cited by 20 publications

(28 citation statements)

References 11 publications

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“…Using this new microheater structure, the heater resistance is reduced, while the heated area is considerably increased, which improves the gas sensor sensitivity without a significant increase in power. The composite heater was fabricated by etching openings in the AlCu conductive pads of an existing design, the so-called D02 design (Figure 2a) published previously [5]. With the openings, we create a succession of resistances, which are able to concentrate the heating of the sensitive material to desired locations.…”

Section: Methodsmentioning

confidence: 99%

“…The tantalum-aluminum TCR and the temperature of the substrate bottom were fixed at −100 ppm/°C and 25 °C, respectively. To calculate the heat losses to the air by conduction and convection, 233.46 Wm −2 K −1 was used as the heat transfer coefficient, when the temperature of the top and bottom surface (heated area) of the membrane reaches 300 °C [5]. Figure 3b shows the temperature distribution over the composite heater design, where a high uniformity in temperature distribution over the active sensitive region can be observed.…”

Section: Device Simulationmentioning

confidence: 99%

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Enhanced Sensing Performance of Integrated Gas Sensor Devices

et al. 2018

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Semiconducting metal oxide (SMO) gas sensors, dedicated to wearable devices were designed, fabricated, and characterized in terms of power consumption, thermal distribution, and sensing capability. The sensors demonstrate a sensitivity down to ppb-level VOC concentrations at a low power consumption of 10.5 mW. To further enhance the baseline stability and sensing response characteristics at low power consumption, a new sensor structure is proposed. The design implements novel aspects in terms of fabrication and microheater geometry, leading to improved sensor performance which enables new applications for SMO gas sensors. In this work, two designs were analyzed using experimental characterization and simulation. The results of the analyses of the two sensors are comparatively reported.

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Section: Methodsmentioning

confidence: 99%

Section: Device Simulationmentioning

confidence: 99%

Enhanced Sensing Performance of Integrated Gas Sensor Devices

et al. 2018

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“…96 The membrane, which surrounds the microheater, is usually comprised of some combination of silicon dioxide (SiO 2 ) and silicon nitride (Si 3 N 4 ). 70,78,97 The membrane is important in providing a platform on which the microheater and sensing film are suspended. Recent interest in SiC based microheaters stray from the typical SiO 2 /Si 3 N 4 stack, but their fabrication is very complex and thereby also cost intensive.…”

Section: Microheater Designmentioning

confidence: 99%

“…Tantalum-Aluminum (TaAl) is another promising composite material, recently suggested in Ref. 97, the advantage of which is its ability to maintain mechanical strength at high temperature and the negative TCR of about −100ppm/ • C.…”

Section: Microheater Designmentioning

confidence: 99%

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Review—System-on-Chip SMO Gas Sensor Integration in Advanced CMOS Technology

Filipovic

Lahlalia

2018

J. Electrochem. Soc.

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The growing demand for the integration of functionalities on a single device is peaking with the rise of IoT. We are near to having multiple sensors in portable and wearable technologies, made possible through integration of sensor fabrication with mature CMOS manufacturing. In this paper we address semiconductor metal oxide sensors, which have the potential to become a universal sensor since they can be used in many emerging applications. This review concentrates on the gas sensing capabilities of the sensor and summarizes achievements in modeling relevant materials and processes for these emerging devices. Recent advances in sensor fabrication and the modeling thereof are further discussed, followed by a description of the essential electro-thermal-mechanical analyses, employed to estimate the devices' mechanical reliability. We further address advances made in understanding the sensing layer, which can be modeled similar to a transistor, where instead of a gate contact, the ionosorped gas ions create a surface potential, changing the film's conduction. Due to the intricate nature of the porous sensing films and the reception-transduction mechanism, many added complexities must be addressed. The importance of a thorough understanding of the electro-thermal-mechanical problem and how it links to the operation of the sensing film is thereby highlighted.

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