Electro-Thermal Modelling and Experimental Verification of Power Semiconductor Diode

Abstract

The aim of the proposed paper is discussing problematics related to the thermal modelling of power electronic components. More in detail, the electro-thermal relationship is investigated for the selected power diode, while analysis shall serve for system optimization considering thermal performance with the use of highly accurate 3D simulation model. The presented approach describes the procedure of the simulation model development, whereby the main part is discussing necessities relevant for material property identification through the indirect procedure, i.e, material properties are not known from the manufacturer. Electro-thermal dependencies are defined within the proposed model, while this model enables parametric changes of the geometrical properties of the device. Added value of this procedure is the possibility of its use in exact determination of the lifetime of a semiconductor component using mathematical models taking into account operational variables (current, voltage, temperature, etc.). The proposed model is verified and validated through thermovision experimental measurements within defined operational conditions.

Influence of the Metal–Semiconductor Interface Model on Power Conservation Principle in a Simulation of Bipolar Devices

“…Even in the application notes [8], where an electrothermal analysis of an insulated gate bipolar (IGBT) GaN transistor is presented, this problem is not discussed. Analyzing several other publications devoted to bipolar structures such as diodes, [9][10][11][12], IGBTs [13], Peltier modules [14], heterojunction bipolar transistors (HBTs) [15], we find that this problem is also not tackled. We do not want to judge if the reported results are fully correct, however, since there are no models details reported and it is not possible to confirm if all the results are fully validated.…”