Electro-optical properties of zigzag and armchair boron nitride nanotubes under a transverse electric field: Tight binding calculations

Chegel, Raad; Behzad, Somayeh

doi:10.1016/j.jpcs.2011.11.013

Cited by 22 publications

(9 citation statements)

References 46 publications

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“…Therefore in order to predict light emission in larger (more realistic) tubes we assume many-body corrections to be a constant with respect to the tube size and we fit the emission energy with a simple linear curve where ξ is the external electric field. This relation was already employed to describe the band gap closing of h-BN nanotubes under the effect of a TEF in simple tight-binding models and ab-initio calculations3137. In principle the linear coefficient α depends on the tube size.…”

Section: Resultsmentioning

confidence: 99%

Efficient Gate-tunable light-emitting device made of defective boron nitride nanotubes: from ultraviolet to the visible

Attaccalite

Wirtz

Marini

et al. 2013

Sci Rep

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Boron nitride is a promising material for nanotechnology applications due to its two-dimensional graphene-like, insulating, and highly-resistant structure. Recently it has received a lot of attention as a substrate to grow and isolate graphene as well as for its intrinsic UV lasing response. Similar to carbon, one-dimensional boron nitride nanotubes (BNNTs) have been theoretically predicted and later synthesised. Here we use first principles simulations to unambiguously demonstrate that i) BN nanotubes inherit the highly efficient UV luminescence of hexagonal BN; ii) the application of an external perpendicular field closes the electronic gap keeping the UV lasing with lower yield; iii) defects in BNNTS are responsible for tunable light emission from the UV to the visible controlled by a transverse electric field (TEF). Our present findings pave the road towards optoelectronic applications of BN-nanotube-based devices that are simple to implement because they do not require any special doping or complex growth.

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Section: Resultsmentioning

confidence: 99%

Efficient Gate-tunable light-emitting device made of defective boron nitride nanotubes: from ultraviolet to the visible

Attaccalite

Wirtz

Marini

et al. 2013

Sci Rep

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“…10 for zigzag and armchair BNNTs with different radius and impurity types. Applying the electric field leads to gap reduction due to Strak effects [25,29,42,43]. For the pristine BNNTs, the field direction does not change the energy gap values due to the symmetry of the system.…”

Section: Electric Field Effectsmentioning

confidence: 99%

Effects of carbon doping on the electronic properties of boron nitride nanotubes: Tight binding calculation

Chegel

2016

Physica E: Low-dimensional Systems and Nanostructures

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“…In contrast, a critical ε g is required to induce polarization in C-C bonds in semiconducting CNT beyond which a stronger response to ε g is imminent. Due to the semiconducting nature of BNNT, it is also expected to be a suitable candidate for optoelectronic applications [ 72 – 77 ]; tuning of optical properties of BNNTs upon applying the transverse electric field has also been reported [ 78 – 80 ].…”

Section: Electronic Structurementioning

confidence: 99%

Boron Nitride Nanotubes for Spintronics

Dhungana

Pati

2014

Sensors

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With the end of Moore's law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR) effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT), which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

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Electro-optical properties of zigzag and armchair boron nitride nanotubes under a transverse electric field: Tight binding calculations

Cited by 22 publications

References 46 publications

Efficient Gate-tunable light-emitting device made of defective boron nitride nanotubes: from ultraviolet to the visible

Efficient Gate-tunable light-emitting device made of defective boron nitride nanotubes: from ultraviolet to the visible

Effects of carbon doping on the electronic properties of boron nitride nanotubes: Tight binding calculation

Boron Nitride Nanotubes for Spintronics

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