Electro-optical porous silicon gas sensor with enhanced selectivity

Jalkanen, Tero; Tuura, Jaani; Mäkilä, Ermei; Salonen, Jarno

doi:10.1016/j.snb.2010.03.005

Cited by 40 publications

(24 citation statements)

References 22 publications

(21 reference statements)

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“…It is shown that the best relative responses (∆I/I 0 ) are obtained for a low applied bias voltage (0.45 V). In addition, it was shown that the sensitivity of the sensor varies with temperature as observed by several authors [21]. It shows that the sensitivities increase with gas pressure for different temperatures.…”

Section: Current-voltage Characteristicssupporting

confidence: 59%

Temperature measurement using a Chx/porous silicon/Si structure encapsulated in a CO2 rich environment

Chiali¹,

Ghellai²,

Gabouze³

et al. 2010

Advances in Materials Sciences

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This work reports on the possible use of microporous silicon as a temperature sensor. This work is based on previous published works [7, 8, and 9]. The device is based on hydrocarbon group (CH x ) / porous silicon (PS) /Si structure. The porous sample was coated with hydrocarbons groups deposited by the plasma of methane /argon mixture. Current-voltage characteristics have been investigated as a function of temperature in the range 20 0 C-70°C.The results show that for a constant voltage in the range 0.7-1V, the current increases linearly with the environment temperature reaches a maximum at 70°C and then stabilizes. This result suggests that the developed structure can be used for sensing temperatures not exceeding 70°C.

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Section: Current-voltage Characteristicssupporting

confidence: 59%

Temperature measurement using a Chx/porous silicon/Si structure encapsulated in a CO2 rich environment

Chiali¹,

Ghellai²,

Gabouze³

et al. 2010

Advances in Materials Sciences

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“…It was shown that it is possible to distinguish between a pollutant like NO 2 and interfering gases like humidity and ethanol by coupling the measurement of optical and electrical quantities. In another example, a gas sensor with two PSi chips that have different hygroscopic properties was used (Jalkanen et al, 2010). Here, the optical and electrical signals were monitored simultaneously, and both sensor types were able to differentiate between the tested analytes.…”

Section: Increasing Reliability In Porous Silicon Optical Sensorsmentioning

confidence: 99%

Some Methods for Improving the Reliability of Optical Porous Silicon Sensors

Hutter¹,

Ruschin²

2012

Advances in Chemical Sensors

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“…Thus, it has a wide range of potential applications, including bio sensors, photovoltaic devices, gas sensors, humidity sensors, vapor sensors, and pressure sensors (Dubey & Gautam, 2009;Dubey, Patil, Bange, & Gautam, 2007;Agarwal & Del Rıo, 2003;Oton et al, 2003;Setzu, Ferrand, & Romestain, 2000;Salcedo, Ramirez Fernandez, & Galeazzo, 1997). PS can also be used for anode materials of Li rechargeable batteries because of its larger surface (Mizsei, 2007;Jalkanen, Tuura, Mäkilä, & Salonen, 2010). Fabrication of PS micro cavity as optical sensor device (Mishra, Patel, & Vohra, 2014).…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Gas Sensor Device for H2 and NO2 from Porous Silicon

Bdaiwi¹

2015

APR

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A nanocrystalline porous silicon (PS) layer was prepared by electrochemical etching method of p-type silicon wafer in hydrofluoric acid (HF). The properties of porous silicon structure under various etching times (10-50 min), HF concentrations, and current density were studied. The study included photoluminescence (PL), morphology, x-ray, and gas sensor. The results (PL) spectra (peak wavelength) can be shifted from (505 to 625) nm. PL analysis indicated that the energy band gap can be tuned from (1.984-2.455) eV with respect to etched time. Atomic Force Microscopy (AFM) analysis showed that the PS layer had a sponge-like structure. Surface roughness and the pyramid-like hillocks on the entire surface play an important role in variation visible luminescence. The AFM images shows that the average diameter of the PS layer pore and thickness the Silicon decreased when etching time increase and the average diameter particleboard ranged from (80.8-35.4) nm. PS X-ray topography studies that the skeleton maintained its silicon crystalline structure after anodization. PS Sensors were fabricated and tested successfully on H 2 and No 2 gas.

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Electro-optical porous silicon gas sensor with enhanced selectivity

Cited by 40 publications

References 22 publications

Temperature measurement using a Chx/porous silicon/Si structure encapsulated in a CO2 rich environment

Temperature measurement using a Chx/porous silicon/Si structure encapsulated in a CO2 rich environment

Some Methods for Improving the Reliability of Optical Porous Silicon Sensors

Fabrication of Gas Sensor Device for H2 and NO2 from Porous Silicon

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