Electro-optical characterization of arsenic-doped CdSeTe and CdTe solar cell absorbers doped in-situ during close space sublimation

Charge Carrier Lifetime Determination in Graded Absorber Solar Cells Using Time‐Resolved Photoluminescence Simulations and Measurements

“…This approach mitigates effects of As accumulation near the front interface where As accumulation can lead to increased interface recombination. [ 22,35–37 ] The analytical models describing graded τ bulk and N A profiles are approximations sufficient for this analysis. [ 21,22 ]…”

“…This implies that with a transition from a traditional Cu-doped device (N A = 1 Â 10 14 cm À3 ) to a graded, As-doped device (N A = 1 Â 10 14 -1 Â 10 15 cm À3 ) one should expect a wider, higher value τ i region in addition to the slower TRPL decays observed with As doping. [22,32,35] Grading results indicate that the utilization of the flat τ i region for TRPL fitting as described in the previous section is still applicable for absorbers with graded τ bulk and N A . The flat τ i time range is slightly narrowed by N A grading, and the value changes slightly due to both τ bulk and N A grading, but it is still appropriate for τ TRPL extraction and τ other calculation.…”

“…Additional input parameters are given in Table 1 with values held fixed unless otherwise specified. [ 6,12,22,39 ]…”

“…This approach mitigates effects of As accumulation near the front interface where As accumulation can lead to increased interface recombination. [22,[35][36][37] The analytical models describing graded τ bulk and N A profiles are approximations sufficient for this analysis. [21,22] Figure 3a,c compares simulated TRPL decays and instantaneous lifetime profiles with and without τ bulk grading, given a fixed acceptor carrier concentration N A = 1 Â 10 15 cm À3 .…”

“…[22,[35][36][37] The analytical models describing graded τ bulk and N A profiles are approximations sufficient for this analysis. [21,22] Figure 3a,c compares simulated TRPL decays and instantaneous lifetime profiles with and without τ bulk grading, given a fixed acceptor carrier concentration N A = 1 Â 10 15 cm À3 . For short-and mid-range τ bulk , 10 and 100 ns respectively, τ bulk grading alters τ i in value but not time range of the flat τ i region.…”