Electro-Optical Characteristics and Analysis of 1×1 mm²Large-Area InGaN/GaN Green LED

Abstract

We investigated the effects of piezoelectric field on the electro-absorption characteristics in InGaN/GaN multiple-quantum well (MQW) green light emitting diodes (LED). Double crystal X-ray diffraction measurement was performed to study the crystalline property and indium (In) composition in the MQW active layer. To measure the electro-luminescence and electro-reflectance (ER) spectroscopy, we fabricated the 1×1 mm 2 large-area green LED chip. The piezoelectric field inside the LED structure was evaluated from the V comp in active layer by the ER spectra. Finally, we analyzed the electro-absorption characteristics of the green LED by using the photo-current spectroscopy.