Electro-Optic Near Field Imaging of High-Power RF/Microwave Transistors in Plastic Packages

Abstract

Abstract-In this paper, through-plastic vector E-field measurements of an LDMOS transistor in an over-molded plastic package are presented. The measurement system uses a commercially-available electro-optic system connected to an NVNA with a comb generator to non-invasively measure the phase-coherent multi-harmonic E-fields. The device is measured in a load-pull measurement system, which is used to present optimal source and load impedances to the transistor during the multi-harmonic E-field measurements. All three E-field components are measured at the fundamental (2.2 GHz) and two harmonics at P 1dB = 53.2 dBm.