2009
DOI: 10.1063/1.3156033
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Electro-optic modulation in slotted resonant photonic crystal heterostructures

Abstract: Two dimensional photonic crystal waveguides in high index materials enable integrated optical devices with an extremely small geometrical footprint on the scale of micrometers. Slotted waveguides are based on the guiding of light in low refractive index materials and a field enhancement in this particular region of the device. In this letter we experimentally demonstrate electro-optic modulation in slotted photonic crystal waveguides based on silicon-on-insulator substrates covered and infiltrated with nonline… Show more

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Cited by 90 publications
(57 citation statements)
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“…2 The electro-optic modulator 3,4 is one of the most important components in silicon photonics, and CMOS-compatible, micrometer-scale devices based on a modulated cavity resonance have been a central focus of research. [5][6][7][8][9][10][11][12][13][14][15][16][17][18] Typically in these systems, a local refractive index change of the silicon results in a change of the transmission through the cavity. This is intuitively understood in the adiabatic limit, in which the modulation happens on a time scale that is much slower than the one given by the photon lifetime, but the phenomenology is in general much richer.…”
Section: Introductionmentioning
confidence: 99%
“…2 The electro-optic modulator 3,4 is one of the most important components in silicon photonics, and CMOS-compatible, micrometer-scale devices based on a modulated cavity resonance have been a central focus of research. [5][6][7][8][9][10][11][12][13][14][15][16][17][18] Typically in these systems, a local refractive index change of the silicon results in a change of the transmission through the cavity. This is intuitively understood in the adiabatic limit, in which the modulation happens on a time scale that is much slower than the one given by the photon lifetime, but the phenomenology is in general much richer.…”
Section: Introductionmentioning
confidence: 99%
“…The calculated in-device Pockels coefficient of the NLO polymer is 12 pm=V, using the technique described in [15]. This value is nearly 1 order of magnitude below the value reported for thin film samples of the same material [13] or other NLO polymers.…”
mentioning
confidence: 85%
“…by experiments at kilohertz modulation frequencies employing the lock-in measurement technique as explained in [15].…”
mentioning
confidence: 99%
“…The centrosymmetric crystal structure of silicon prohibits native silicon from possessing the Pockels effect, with the result that switches tend to be either very long or require high powers to operate. This problem limits the use of silicon in photonic integrated circuits (PICs) [6]. The thermo-optic effect in silicon is comparatively higher than EO effect, but the switching time above 1 μs is an important limitation in thermo-optic devices [2,8].…”
Section: Introductionmentioning
confidence: 99%