Integrated photonic circuits (PICs) operating at cryogenic temperatures are fundamental building blocks required to achieve scalable quantum computing, and cryogenic computing technologies 1,2. Silicon PICs have matured for room temperature applications, but their cryogenic performance is limited by the absence of efficient low temperature electro-optic (EO) modulation. Here we demonstrate EO switching and modulation from room temperature down to 4 K by using the Pockels effect in integrated barium titanate (BaTiO3)based devices 3. We investigate the temperature-dependence of the nonlinear optical (NLO) properties of BaTiO3, showing an effective Pockels coefficient of 200 pm/V at 4 K. The fabricated devices exhibit an EO bandwidth of 30 GHz, ultra-low-power tuning which is 10 9 times more efficient than thermal tuning, and high-speed data modulation at 20 Gbps. Our results demonstrate a missing component for cryogenic PICs. Our results remove major roadblocks for the realisation of cryogenic-compatible systems in the field of quantum computing, supercomputing and sensing, and for interfacing those systems with instrumentation at room-temperature. Cryogenic technologies are becoming essential for future computing systems, a trend fuelled by the worldwide quest to develop quantum computing systems and future generations of highperformance classical computing systems 4,5. While most computing architectures rely solely on electronic circuits, photonic components are becoming increasingly important (Supplementary Note, SN 1). First, PICs can be used for quantum computing approaches where the quantum nature of photons is exploited as qubits 1,2. Second, optical interconnects can overcome limitations in