Electro-and photoluminescence in graded bandgap nanostructures at moderate double-injection level

Aroutiounian, V. M.; Ghoolinian, Mher Zh.

doi:10.1117/12.351262

Cited by 3 publications

(2 citation statements)

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“…Microstructural and physical characteristics of PS, such as thickness, bulk porosity and specific area of the surface, pore size distribution, dielectric permittivity and index of refraction, depend directly on the production conditions, e.g. on the electrolyte composition, anodizing current density, duration of etching and outer illumination [1,[9][10][11]. In addition, the PS layer parameters depend on the properties of the silicon bulk material-its conductivity type, doping level and orientation of crystals.…”

Section: Introductionmentioning

confidence: 99%

“…For precise determination of the PS layer thickness by this method it is necessary to know the value of the refractive index which is related directly to the dielectric permittivity and, hence, to the layer porosity. It is known, for example, that PS may have a wide range of porosity values, from 2% to 85% [1,[9][10][11], depending on the regimes of electrochemical processing, level of doping of the initial silicon with donor or acceptor impurities, electrolyte composition, etc.…”

Section: Introductionmentioning

confidence: 99%

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Determination of basic parameters of porous silicon

Adamyan¹,

Adamian²,

Aroutiounian³

2006

J. Phys. D: Appl. Phys.

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A new simple nondestructive capacitance method is proposed for determination of the basic parameters of porous silicon such as layer thickness, porosity and dielectric permittivity. The method is based on two measurements of the capacitance of a metal/porous silicon/single crystalline silicon/metal (M/PS/c-Si/M) structure, one measurement being performed with empty pores, and the other measurement with pores filled by an organic compound with a high value of dielectric permittivity. A comparison of results obtained by the ball lap and gravimetric techniques before and after anodization with the capacitance data measurements carried out with the same samples prior to their destruction shows sufficiently good agreement.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Determination of basic parameters of porous silicon

Adamyan¹,

Adamian²,

Aroutiounian³

2006

J. Phys. D: Appl. Phys.

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Noise Spectroscopy of Gas Sensors

et al. 2008

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On the Fractal Model of the Porous Layer Formation

Aroutiounian

Ghulinyan

2000

Mod. Phys. Lett. B

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In the present paper, a fractal model of a porous layer formation is proposed. The consideration of the time-dependent pore growth process has allowed us to calculate such important parameters of porous matrix as the formed surface area, and surface and volume porosity values. We have theoretically shown that the formed surface area strongly depends on the difference between the pore size growth velocities parallel and perpendicular to the surface, i.e. the crystallographic orientation of the material surface. The volume and surface porosity values as well as the formed porous surface area are linear functions on the anodization current density. These results are in rather good agreement with other theoretical and experimental data.

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Electro-and photoluminescence in graded bandgap nanostructures at moderate double-injection level

Cited by 3 publications

References 1 publication

Determination of basic parameters of porous silicon

Determination of basic parameters of porous silicon

Noise Spectroscopy of Gas Sensors

On the Fractal Model of the Porous Layer Formation

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