Electrically widely tunable interband cascade lasers

Jiang, Yuxuan; Lu, Li; Tian, Zhaobing; Hao, Yue; Zhao, Lingjuan; Yang, Rui Q.; Mıshıma, Tetsuya D.; Santos, M. B.; Johnson, Matthew B.; Mansour, Kamjou

doi:10.1063/1.4865941

Cited by 23 publications

(16 citation statements)

References 25 publications

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“…for human breath analysis (Tittel 2010) or detection of harmful or toxic gases, like formaldehyde (Lundqvist et al 2012), methane (Dong et al 2016) or nitric oxide (Von Edlinger et al 2014). ICLs have been shown to be efficient laser sources, with high power operation at room temperature (Jiang et al 2014;Kim et al 2012) and low threshold currents, resulting in low power consumption (Vurgaftman et al 2011). Nevertheless, there is still a huge demand for new generation devices emitting in the long-wavelength infrared (LWIR) range, in particular to detect higher order hydrocarbons.…”

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confidence: 99%

Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates

et al. 2016

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Optical properties of AlSb/InAs/GaInSb/InAs/AlSb quantum wells (QWs) grown on an InAs substrate were investigated from the point of view of room temperature emission in the mid-and long-wavelength infrared ranges. By means of two independent techniques of optical spectroscopy, photoreflectance and temperature-dependent photoluminescence, it was proven that the main process limiting the performance of such InAs substrate-based type II structures is related to the escape of carriers from the hole ground state of the QW. Two nonradiative recombination channels were identified. The main process was attributed to holes tunneling to the valence band of the GaAsSb spacing layer and the second one with trapping of holes by native defects located in the same layer.

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confidence: 99%

Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates

et al. 2016

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“…Although the mentioned wavelength irregularities of the order of 60 nm in the case of the InAs-based structure might be considered as significant with respect to some applications, it has been already presented [30] that the emission energy of an operating device can be electrically tuned by at least that amount. This allows for these minor growth inaccuracies to be then fully compensated by an external electric field in an operating ICL.…”

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confidence: 99%

Submonolayer Uniformity of Type II InAs/GaInSb W-shaped Quantum Wells Probed by Full-Wafer Photoluminescence Mapping in the Mid-infrared Spectral Range

Dyksik¹,

Motyka²,

Sęk³

et al. 2015

Nanoscale Res Lett

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The spatial uniformity of GaSb-and InAs substrate-based structures containing type II quantum wells was probed by means of large-scale photoluminescence (PL) mapping realized utilizing a Fourier transform infrared spectrometer. The active region was designed and grown in a form of a W-shaped structure with InAs and GaInSb layers for confinement of electrons and holes, respectively. The PL spectra were recorded over the entire 2-in. wafers, and the parameters extracted from each spectrum, such as PL peak energy position, its linewidth and integrated intensity, were collected in a form of two-dimensional spatial maps. Throughout the analysis of these maps, the wafers' homogeneity and precision of the growth procedure were investigated. A very small variation of PL peak energy over the wafer indicates InAs quantum well width fluctuation of only a fraction of a monolayer and hence extraordinary thickness accuracy, a conclusion further supported by high uniformity of both the emission intensity and PL linewidth.

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“…This type of active region has been used in ICLs emitting in the mid infrared in order to enhance the transition oscillator strength 28 or to increase the spectral tunability range. 29 We choose a system consisting of a triple asymmetric quantum well, because in such a case the wave function is more susceptible to the influence of the electric field. The widths of the layers in the chosen InAs/Ga 0.65 In 0.35 Sb/InAs/Ga 0.65 In 0.35 Sb/InAs structure are 1.4nm-2.4nm-1.5nm-3.3nm-1.5nm.…”

confidence: 99%

Optimizing the active region of interband cascade lasers for passive mode-locking

et al. 2017

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The work proposes possible designs of active regions for a mode-locked interband cascade laser emitting in the mid infrared. For that purpose we investigated the electronic structure properties of respectively modified GaSb-based type II W-shaped quantum wells, including the effect of external bias in order to simultaneously fulfil the requirements for both the absorber as well as the gain sections of a device. The results show that introducing multiple InAs layers in type II InAs/GaInSb quantum wells or introducing a tensely-strained GaAsSb layer into “W-shaped” type II QWs offers significant difference in optical transitions’ oscillator strengths (characteristic lifetimes) of the two oppositely polarized parts of such a laser, being promising for utilization in mode-locked devices.

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Electrically widely tunable interband cascade lasers

Cited by 23 publications

References 25 publications

Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates

Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates

Submonolayer Uniformity of Type II InAs/GaInSb W-shaped Quantum Wells Probed by Full-Wafer Photoluminescence Mapping in the Mid-infrared Spectral Range

Optimizing the active region of interband cascade lasers for passive mode-locking

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