Electrically Tunable van der Waals Interaction in Graphene–Molecule Complex

Muruganathan, Manoharan; Sun, Jian; Imamura, Tomonori; Mizuta, Hiroshi

doi:10.1021/acs.nanolett.5b03653

Cited by 54 publications

(71 citation statements)

References 34 publications

(66 reference statements)

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Section: Mechanism and Characterization Of Sctdmentioning

confidence: 99%

“…SCTD is very susceptible to the external environment, such as the applied electric field, the in‐plane tensile strain, and incident light excitation. This also offers the possibility of rationally tuning the SCTD process . It is found that the charge‐transfer direction can be tuned by applying an external electric field.…”

Section: Mechanism and Characterization Of Sctdmentioning

confidence: 99%

See 1 more Smart Citation

Surface Charge Transfer Doping of Low‐Dimensional Nanostructures toward High‐Performance Nanodevices

Zhang¹,

Shao²,

He³

et al. 2016

Advanced Materials

151

139

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Device applications of low-dimensional semiconductor nanostructures rely on the ability to rationally tune their electronic properties. However, the conventional doping method by introducing impurities into the nanostructures suffers from the low efficiency, poor reliability, and damage to the host lattices. Alternatively, surface charge transfer doping (SCTD) is emerging as a simple yet efficient technique to achieve reliable doping in a nondestructive manner, which can modulate the carrier concentration by injecting or extracting the carrier charges between the surface dopant and semiconductor due to the work-function difference. SCTD is particularly useful for low-dimensional nanostructures that possess high surface area and single-crystalline structure. The high reproducibility, as well as the high spatial selectivity, makes SCTD a promising technique to construct high-performance nanodevices based on low-dimensional nanostructures. Here, recent advances of SCTD are summarized systematically and critically, focusing on its potential applications in one- and two-dimensional nanostructures. Mechanisms as well as characterization techniques for the surface charge transfer are analyzed. We also highlight the progress in the construction of novel nanoelectronic and nano-optoelectronic devices via SCTD. Finally, the challenges and future research opportunities of the SCTD method are prospected.

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Section: Mechanism and Characterization Of Sctdmentioning

confidence: 99%

Section: Mechanism and Characterization Of Sctdmentioning

confidence: 99%

Surface Charge Transfer Doping of Low‐Dimensional Nanostructures toward High‐Performance Nanodevices

Zhang¹,

Shao²,

He³

et al. 2016

Advanced Materials

151

139

View full text Add to dashboard Cite

show abstract

“…However, it was difficult to validate such phenomenon experimentally as the previous methods in obtaining n ( t ) and µ ( t ) require sweeping the gate voltage V G across the charge neutral point (CNP) to track the incremental changes of the CNP voltage, ∆ V CNP (∆ n = C G ∆ V CNP /e c , where C G is the gate capacitance per unit area of the graphene FET, e c = 1.6 × 10 −19 C is the elementary charge, and ∆ n is the change of carrier density); while the range of V G sweeping needs to be large enough to cover the linear region of the graphene FET to extract µ ( t ) . These large gate voltage sweepings inevitably cause significant disturbance of the defect states on graphene due to the fluctuation of the graphene work function (a few hundred meV) and the flipping of the electric field direction at the graphene surface …”

Section: Introductionmentioning

confidence: 99%

Defect‐Induced Gas Adsorption on Graphene Transistors

Liu

Chu

et al. 2018

Adv Materials Inter

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It is believed that the intrinsic chemical sensitivity of graphene comes from the gas adsorption associated doping [4] and scattering [5] effects, which can change the carrier density, n(t), and the field effect mobility, µ(t), of graphene, respectively. On the other hand, the extrinsic defects on graphene, especially the charged impurities, [6] were also reported to affect the graphene gas sensing performance. [7][8][9] Specifically, it was predicted in theory [10,11] that the charged gas molecules (after doping) will first adsorb and compensate on the oppositely charged defects on graphene, increasing the µ(t); then adsorbs graphene intrinsically, decreasing the µ(t).However, it was difficult to validate such phenomenon experimentally as the previous methods [4,[12][13][14] in obtaining n(t) and µ(t) require sweeping the gate voltage V G across the charge neutral point (CNP) [15] to track the incremental changes of the CNP voltage, ∆V CNP (∆n = C G ∆V CNP /e c , where C G is the gate capacitance per unit area of the graphene FET, e c = 1.6 × 10 −19 C is the elementary charge, and ∆n is the change of carrier density); while the range of V G sweeping needs to be large enough to cover the linear region of the graphene FET to extract µ(t). [6] These large gate voltage sweepings inevitably cause significant disturbance of the defect states on graphene due to the fluctuation of the graphene work function [16] (a few hundred meV) and the flipping of the electric field direction at the graphene surface. [17] Here, a new method to probe n(t) and µ(t) is introduced to observe the defect-induced gas adsorption without sweeping the gate voltage as shown in Figure 1a,b. By adding a serial small AC voltage v g on the static DC gate voltage, one can analytically solve both n(t) and µ(t) from the graphene conductance g AB directly in the linear region. For simplicity, we use the hole branch of graphene as the example as most devices are naturally p-doped in air [18] after fabrication (see the Experimental Section), such that n(t) represents the density of holes. Figure 1c shows that the DC gate voltage of the FET is kept at V G = −10 V (V CNP = 20 V) and the AC gate voltage |v g | = 1 V is oscillating at 50 Hz to slightly fluctuate the work function of graphene by a few meV while keeping the work function quasistatic. The carrier density variation, n(t) − n 0 (Figure 1d), and the inverse of the field effect mobility variation, µ −1 (t) − µ 0 −1 (Figure 1e), can be extracted from the channel conductance of graphene in real time (see Note 1 in the Supporting Information for extraction method), where n 0 = 2.0 × 10 12 cm −2 is the initial carrier density and µ 0 −1 = 4.0 V s m −2 is the initial value of the inverse of field Understanding the influences of defect states on gas adsorption on graphene is at the heart of developing graphene based gas sensors for practical applications. However, it has been challenging to experimentally discriminate the gas adsorptions induced by the defects on graphene, especially the charged impurit...

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“…[362] Both D3 and MBD have been shown to be very effective for many different types of problems, from ice cluster energies through crystal cohesion energies to basic chemistry and to surface adhesion to interactions with graphite and nanotubes. [260][261][262][263][264][265][266][267][268][269][270]341] This occurs despite fundamental limitations in the description of the interactions (Table 2). Success comes from the fact that these methods are designed to model interaction energies and geometries and are usually only applied for these purposes.…”

Section: à6mentioning

confidence: 99%

“…This includes a molecular n-bit shift register made by the controlled synthesis of large porphyrin assemblies on substrates containing leads fabricated using current silicon device technology. [259] The established synthetic strategies involve scanning tunnelling microscopy (STM)-induced reactions of molecules [260][261][262][263][264][265][266][267][268][269][270] on silicon surfaces performed with atomic precision, [271,272] that are subsequently linkable to porphyrins.…”

mentioning

confidence: 99%

Putting David Craig’s Legacy to Work in Nanotechnology and Biotechnology

Reimers¹

2016

Aust. J. Chem.

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left us with a lasting legacy concerning basic understanding of chemical spectroscopy and bonding. This is expressed in terms of some of the recent achievements of my own research career, with a focus on integration of Craig's theories with those of Noel Hush to solve fundamental problems in photosynthesis, molecular electronics (particularly in regard to the molecules synthesized by Maxwell Crossley), and self-assembled monolayer structure and function. Reviewed in particular is the relation of Craig's legacy to: the 50-year struggle to assign the visible absorption spectrum of arguably the world's most significant chromophore, chlorophyll; general theories for chemical bonding and structure extending Hush's adiabatic theory of electron-transfer processes; inelastic electron-tunnelling spectroscopy (IETS); chemical quantum entanglement and the Penrose-Hameroff model for quantum consciousness; synthetic design strategies for NMR quantum computing; Gibbs free-energy measurements and calculations for formation and polymorphism of organic self-assembled monolayers on graphite surfaces from organic solution; and understanding the basic chemical processes involved in the formation of gold surfaces and nanoparticles protected by sulfur-bound ligands, ligands whose form is that of Au 0 -thiyl rather than its commonly believed Au I -thiolate tautomer.

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Electrically Tunable van der Waals Interaction in Graphene–Molecule Complex

Cited by 54 publications

References 34 publications

Surface Charge Transfer Doping of Low‐Dimensional Nanostructures toward High‐Performance Nanodevices

Surface Charge Transfer Doping of Low‐Dimensional Nanostructures toward High‐Performance Nanodevices

Defect‐Induced Gas Adsorption on Graphene Transistors

Putting David Craig’s Legacy to Work in Nanotechnology and Biotechnology

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