Electrically Tunable Valley-Light Emitting Diode (vLED) Based on CVD-Grown Monolayer WS<sub>2</sub>

Yang, Weihuang; Shang, Jingzhi; Wang, Jianpu; Shen, Xiaonan; Cao, Bingchen; Peimyoo, Namphung; Zou, Chunjiang; Chen, Yu; Wang, Yanlong; Cong, Chunxiao; Huang, Wei; Yu, Ting

doi:10.1021/acs.nanolett.5b04066

Cited by 187 publications

(176 citation statements)

References 53 publications

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“…Transition metal dichalcogenide (TMDC)‐layered materials with intriguing optoelectrical properties have attracted significant interest for various device applications . Considering the bandgap of 2D TMDCs‐layered materials in the range of 1.7–2.2 eV is of significant interest to integrate with other semiconductors to develop Van‐der‐Wall (VdW) heterostructures .…”

Section: Introductionmentioning

confidence: 99%

Influence of MoS₂‐Silicon Interface States on Spectral Photoresponse Characteristics

Desai

Ranade

Mahyavanshi

et al. 2019

Physica Status Solidi (a)

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Fabrication of heterojunction with transition metal dichalcogenide (TMDC) layers and convention bulk semiconductor is of great interest for optoelectronic device applications. Herein, the influence of interface in a fabricated molybdenum sulfide (MoS2) and p‐type silicon (Si) heterostructure on bias‐dependent photoresponse is demonstrated. The MoS2 layers deposited on the p‐type Si wafer show a photovoltaic action and a photoresponsivity of 139 mA W−1 at 860 nm wavelength for a bias voltage of −5 V. It is observed that the spectral photoresponse of the device enhanced considerably with an applied bias voltage than that of the photovoltaic mode due to an effective field effect across the heterojunction. The increase in photoresponsivity at a higher wavelength (>600 nm) is significant than that of lower wavelength (<500 nm) at the bias voltage. This may due to surface recombination of photocarriers for higher energy photons in the presence of interface states at the MoS2/Si heterojunction. The understanding of photocarriers behavior in the fabricated MoS2/Si heterojunction interface can be critical to develop high photoresponsive heterojunction devices.

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Section: Introductionmentioning

confidence: 99%

Influence of MoS₂‐Silicon Interface States on Spectral Photoresponse Characteristics

Desai

Ranade

Mahyavanshi

et al. 2019

Physica Status Solidi (a)

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“…As a semiconducting alternative to graphene, TMDs have promising applications in photonics [1,2], optoelectronics [3,4], valleytronics [5], field effect transistors [6], gas sensors [7], mechanical resonators [8,9] and energy storage devices [10].…”

Section: Introductionmentioning

confidence: 99%

Influence of the substrate material on the optical properties of tungsten diselenide monolayers

et al. 2017

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Monolayers of transition-metal dichalcogenides such as WSe 2 have become increasingly attractive due to their potential in electrical and optical applications. Because the properties of these 2D systems are known to be affected by their surroundings, we report how the choice of the substrate material affects the optical properties of monolayer WSe 2 . To accomplish this study, pump-density-dependent micro-photoluminescence measurements are performed with time-integrating and time-resolving acquisition techniques. Spectral information and power-dependent mode intensities are compared at 290K and 10K for exfoliated WSe 2 on SiO 2 /Si, sapphire (Al 2 O 3 ), hBN/Si 3 N 4 /Si, and MgF 2 , indicating substrate-dependent appearance and strength of exciton, trion, and biexciton modes. Additionally, one CVD-grown WSe 2 monolayer on sapphire is included in this study for direct comparison with its exfoliated counterpart. Time-resolved micro-photoluminescence shows how radiative decay times strongly differ for different substrate materials. Our data indicates exciton-exciton annihilation as a shortening mechanism at room temperature, and subtle trends in the decay rates in correlation to the dielectric environment at cryogenic temperatures. On the measureable time scales, trends are also related to the extent of the respective 2D-excitonic modes' appearance. This result highlights the importance of further detailed characterization of exciton features in 2D materials, particularly with respect to the choice of substrate.

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“…This property enables selectively pumping + K (− K ) valley with left (right) hand circular light excitations to create an imbalanced carrier population between two valleys. Realizing such net valley polarization is an essential step for developing valleytronic devices . Resulted from the opposite selection rules of two valleys, controlling valley polarization in mono‐layer TMDs by optical helicity is achievable.…”

mentioning

confidence: 99%

Engineering Valley Polarization of Monolayer WS₂: A Physical Doping Approach

Feng

Cong

Konabe

et al. 2019

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The emerging field of valleytronics has boosted intensive interests in investigating and controlling valley polarized light emission of monolayer transition metal dichalcogenides (1L TMDs). However, so far, the effective control of valley polarization degree in monolayer TMDs semiconductors is mostly achieved at liquid helium cryogenic temperature (4.2 K), with the requirements of high magnetic field and on‐resonance laser, which are of high cost and unwelcome for applications. To overcome this obstacle, it is depicted that by electrostatic and optical doping, even at temperatures far above liquid helium cryogenic temperature (80 K) and under off‐resonance laser excitation, a competitive valley polarization degree of monolayer WS2 can be achieved (more than threefold enhancement). The enhanced polarization is understood by a general doping dependent valley relaxation mechanism, which agrees well with the unified theory of carrier screening effects on intervalley scattering process. These results demonstrate that the tunability corresponds to an effective magnet field of ≈10 T at 4.2 K. This work not only serves as a reference to future valleytronic studies based on monolayer TMDs with various external or native carrier densities, but also provides an alternative approach toward enhanced polarization degree, which denotes an essential step toward practical valleytronic applications.

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Electrically Tunable Valley-Light Emitting Diode (vLED) Based on CVD-Grown Monolayer WS₂

Cited by 187 publications

References 53 publications

Influence of MoS₂‐Silicon Interface States on Spectral Photoresponse Characteristics

Influence of MoS₂‐Silicon Interface States on Spectral Photoresponse Characteristics

Influence of the substrate material on the optical properties of tungsten diselenide monolayers

Engineering Valley Polarization of Monolayer WS₂: A Physical Doping Approach

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Electrically Tunable Valley-Light Emitting Diode (vLED) Based on CVD-Grown Monolayer WS2

Cited by 187 publications

References 53 publications

Influence of MoS2‐Silicon Interface States on Spectral Photoresponse Characteristics

Influence of MoS2‐Silicon Interface States on Spectral Photoresponse Characteristics

Influence of the substrate material on the optical properties of tungsten diselenide monolayers

Engineering Valley Polarization of Monolayer WS2: A Physical Doping Approach

Contact Info

Product

Resources

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Electrically Tunable Valley-Light Emitting Diode (vLED) Based on CVD-Grown Monolayer WS₂

Influence of MoS₂‐Silicon Interface States on Spectral Photoresponse Characteristics

Influence of MoS₂‐Silicon Interface States on Spectral Photoresponse Characteristics

Engineering Valley Polarization of Monolayer WS₂: A Physical Doping Approach