2021
DOI: 10.1039/d1cp02012a
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Electrically tunable band gap in strained h-BN/silicene van der Waals heterostructures

Abstract: The charge redistribution and orbital hybridization due to external electric fields and compressive strain are very promising for silicene-based nanoelectronics.

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Cited by 4 publications
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“…In vdW structures formed by stacking of layers, 57 the possibility for Li-ion diffusion through hollow sites increases. Even considering the DB silicene as a single layer, there are two non-equivalent hollow sites.…”
Section: Structural and Electronic Properties Of Dbmentioning
confidence: 99%
“…In vdW structures formed by stacking of layers, 57 the possibility for Li-ion diffusion through hollow sites increases. Even considering the DB silicene as a single layer, there are two non-equivalent hollow sites.…”
Section: Structural and Electronic Properties Of Dbmentioning
confidence: 99%