Electrically pumped ultraviolet random lasing action from p-NiO/n-GaN heterojunction

Wang, Hui; Zhao, Yang; Wu, Chun; Wu, Guoguang; Zhang, Baolin; Du, Guotong

doi:10.1016/j.ijleo.2015.05.121

Cited by 5 publications

(3 citation statements)

References 21 publications

(22 reference statements)

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“…5 However, this minor deviation from the perfect cubic structure can be neglected for our study. Its properties make NiO an interesting material for many GaN-based applications: Heterojunction p-NiO/n-GaN diodes 6,7 as well as normally-off operating heterojunction field-effect transistors (HFETs) 8 have been investigated, based on the equivalent work function of NiO and GaN. 8 Furthermore, NiO has been used as a stable hydrogen reduction catalyst to enhance the efficiency of GaN-based water splitting 9 and protect the GaN from decomposition during this process.…”

Section: Introductionmentioning

confidence: 99%

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Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)

Budde

Remmele

Tschammer

et al. 2020

Journal of Applied Physics

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The growth of NiO on GaN(00.1) substrates by plasma-assisted molecular beam epitaxy under oxygen rich conditions was investigated at growth temperatures between 100 • C and 850 • C. Epitaxial growth of NiO(111) with two rotational domains, with epitaxial relation NiO(110) || GaN(11.0) and NiO(101) || GaN(11.0), was observed by X-ray diffraction (XRD) and confirmed by in-situ reflection high-energy electron diffraction as well as transmission electron microscopy (TEM) and electron backscatter diffraction. With respect to the high lattice mismatch of 8.1 % and a measured low residual tensile layer strain, growth by lattice matching epitaxy or domain matching epitaxy is discussed. The morphology measured by atomic force microscopy showed a grainy surface, probably arising from the growth by the columnar rotational domains visible in TEM micrographs. The domain sizes measured by AFM and TEM increase with the growth temperature, indicating an increasing surface diffusion length. Growth at 850 • C, however, involved local decomposition of the GaN substrate that lead to an interfacial β-Ga 2 O 3 (201) layer and a high NiO surface roughness. Raman mesurements of the quasi-forbidden one-phonon peak indicate increasing layer quality (decreasing defect density) with increasing growth temperature. The results above suggest optimum growth temperatures around 700 • C for high layer and interface quality.

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Section: Introductionmentioning

confidence: 99%

“…10 . So far, NiO on GaN has been grown by electronbeam evaporation, 11 RF magnetron sputtering, 7 or metal organic chemical vapor deposition . 12 While plasmaassisted molecular beam epitaxy (PA-MBE) is a wellsuited method to grow high-quality oxide layers and interfaces, this method has not been reported for the growth of NiO on GaN.…”

Section: Introductionmentioning

confidence: 99%

Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)

Budde

Remmele

Tschammer

et al. 2020

Journal of Applied Physics

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“…Random lasing can be realized by optical pumping [22] or electrical pumping [23]. The former requires some proper scatterers as well as a proper gain medium and is thus possibly constructed in a haphazard architecture; however, a specialized structure is indispensable for a random laser based on an electrical pump, such as a P-I-N junction, a metal-insulatorsemiconductor structure or a metal-semiconductor-semiconductor [24].…”

Section: Introductionmentioning

confidence: 99%

Alumina particles doped in a polymer film act as scatterers for random laser generation

et al. 2018

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Lasing can be achieved with a system that has randomly distributed particles that act as scatterers in polymer films doped with laser dyes; a strict resonant cavity is not required. In this study, alumina particles and Rhodamine 6G dye were dispersed in polyvinyl pyrrolidone solutions as slurry to prepare thin films by a spin-coating method. These films were then pumped as a laser generator using a pulsed Nd:YLF laser. The results indicate that film thickness had an obvious affect on laser emission, and the lasing intensity increased with the pump energy, which tended to increase and then decrease with film thickness. An optical model based on the fabricated films was established to analyze light coupling with the films and possible distribution of light in films.

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