Electrically pumped continuous-wave vertical-cavity surface-emitting lasers at ∼2.6 μm

Arafin, Shamsul; Bachmann, Alexander; Kashani-Shirazi, K.; Amann, Markus‐Christian

doi:10.1063/1.3240406

Cited by 34 publications

(15 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To facilitate surface emission, advanced vertical-cavity surface-emitting lasers (VCSELs) exhibit single-mode emissions by monolithic incorporation of distributed Bragg reflectors (DBRs) or 1D-PC reflectors. For example, MIR VCSELs based on GaSb and InP substrates demonstrated a single-mode operation with a side-mode suppression ratio (SMSR) over 25 dB at a wavelength range of 2.5-2.6 µm [7,8]. Recently, novel photonic-crystal surface-emitting lasers (PCSELs) draw increasing attention because of their single-mode operation, high optical output, and narrow beam divergence [9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Mid-Infrared Photonic-Crystal Surface-Emitting Lasers with InGaAs/GaAsSb ‘W’-Type Quantum Wells Grown on InP Substrate

Kang

Lin

et al. 2018

Photonics

View full text Add to dashboard Cite

InP-based InGaAs/GaAsSb ‘W’-type quantum well (QW) photonic-crystal (PC) surface- emitting lasers (SELs) of 2.2 μm wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Photonic-crystal surface-emitting laser (PCSEL) devices are investigated in terms of PC parameters of etch depth, lattice period, and filling factor. The lasing emissions cover wavelengths from 2182 nm to 2253 nm. The temperature-dependent lasing characteristics are also studied in terms of lattice period. All PCSELs show consistent lasing wavelength shift against temperature at a rate of 0.17 nm/K. The characteristic temperatures of PCSELs are extracted and discussed with respect to wavelength detuning between QW gain peak and PC cavity resonance.

show abstract

Section: Introductionmentioning

confidence: 99%

Mid-Infrared Photonic-Crystal Surface-Emitting Lasers with InGaAs/GaAsSb ‘W’-Type Quantum Wells Grown on InP Substrate

Kang

Lin

et al. 2018

Photonics

View full text Add to dashboard Cite

show abstract

“…As a standard practice, for fabricating many optoelectronic devices including widelytunable lasers, e.g. sampled-grating distributed-Bragg-reflector (SG-DBR) [7] and verticalcavity surface-emitting lasers (VCSELs) [8], one usually uses etch-stop layers in order to control the etch depth with high accuracy of nanometer order. In such a way, it is possible to selectively remove the desired materials against another layer.…”

Section: Introductionmentioning

confidence: 99%

Study of wet and dry etching processes for antimonide-based photonic ICs

Arafin¹,

McFadden²,

Paul³

et al. 2019

Opt. Mater. Express

Self Cite

View full text Add to dashboard Cite

We report on the dry etch process parameters and the associated etch rates for target and mask materials, as well as surface roughness in an inductively coupled plasma (ICP) for the (AlGaIn)(AsSb)-compounds. The essential chemistry is based on Cl 2 with the addition of N 2 for sidewall passivation. The optimized ICP etch process is capable of producing high aspect ratio structures with smooth sidewalls. In situ reflectance monitoring with a 670-nm-wavelength laser was used to enable stop-etching at a material interface with high accuracy. Given the additional need for highly selective wet chemical etchants in the fabrication of GaSb based electronic and optoelectronic devices, an extensive investigation was also performed to examine numerous etch solutions. These etchants were listed with etch rates, selectivities, and surface roughness in order to validate their suitability for intended applications. Despite the frequent use of GaSb or InAsSb materials for etch stop layers against each other, devices where their unique type-II broken bandgap alignment is undesired require new selective wet etchants between GaSb and AlGaAsSb with good selectivity. All of the wet chemical and dry etching processes described here were optimized using an n-type GaSb substrate.

show abstract

“…Even longer laser wavelengths have been demonstrated with interband cascade lasers (ICLs) [5]. However, as far as electrically pumped VCSELs are concerned 2.6 μm is the longest wavelength reported for room temperature CW operation [12]. Uncertainties in the material parameters of quarternary and quinternary materials required for these lasers together with growth and processing challenges impede the development speed of GaSb-based VCSELs as compared to their edge-emitting counterpart.…”

Section: Introductionmentioning

confidence: 99%

InP-Based Vertical-Cavity Surface-Emitting Lasers With Type-II Quantum Wells

Sprengel

Veerabathran

Federer

et al. 2015

IEEE J. Select. Topics Quantum Electron.

Self Cite

View full text Add to dashboard Cite

InP-based type-II quantum wells are a promising concept for long wavelength lasers beyond 2 μm. In this paper, recently developed vertical-cavity surface-emitting lasers for 2.5 μm with type-II quantum wells are introduced and their performance is discussed. These lasers demonstrate single-mode CW operation with an output power up to 400 μW and side-mode suppression ratio of 30 dB. The maximum temperature for CW operation is 10°C. In order to further analyze their performance, a phenomenological model for the temperature dependences of threshold current densities is presented. Based on this model influence of heat sink temperature, current broadening and self-heating is quantified and conclusions are drawn for an improved design.Index Terms-Type-II quantum well, VCSEL, surface emitting, W-shaped quantum well, laser. 1077-260X

show abstract

Electrically pumped continuous-wave vertical-cavity surface-emitting lasers at ∼2.6 μm

Cited by 34 publications

References 16 publications

Mid-Infrared Photonic-Crystal Surface-Emitting Lasers with InGaAs/GaAsSb ‘W’-Type Quantum Wells Grown on InP Substrate

Mid-Infrared Photonic-Crystal Surface-Emitting Lasers with InGaAs/GaAsSb ‘W’-Type Quantum Wells Grown on InP Substrate

Study of wet and dry etching processes for antimonide-based photonic ICs

InP-Based Vertical-Cavity Surface-Emitting Lasers With Type-II Quantum Wells

Contact Info

Product

Resources

About