Electrically programmable nonvolatile memory in CMOS technology

Ermakov, Igor V.; Shelepin, N. A.

doi:10.1134/s1063739715070069

Cited by 4 publications

(2 citation statements)

References 6 publications

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“…This state is defined as the "0" state. The process of pulling electrons from the floating gate to the drain is defined as writing or programming [13].…”

Section: Eeprom Cell Typesmentioning

confidence: 99%

Structural Design of an Electrically Erasable EEPROM Memory Cell

Zhao¹

2020

WJET

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EEPROM is an electrically erasable and programmable memory. The technology is mature and stable with low cost, so it is the mainstream in the application of electronic products in daily life. People use it in every way. In the fields of personal identity card, bank card, medical insurance card, traffic card and other smart cards, which are closely related to personal property, and in the field of communication system and other consumer electronic products such as PDA and digital camera, EEPROM is used. In instruments and other embedded systems, such as smart flowmeters, it is usually necessary to store information such as setting parameters, field data, etc., which requires that the system is not lost when it is powered down so that the data you originally set could be restored next time. Therefore, a certain capacity of EEPROM. Through the storage or release of electrons on the floating gate tube of the memory cell, the memory appears to be on or off when the floating gate tube is read, so its logic value will be judged as "0" Or "1". The definition of logic "0" or "1" varies depending on the logical design of the product. This work designs a memory cell consisting of two transistors. The NMOS tube is used as a selection tube and controlled by the word line. It can withstand a part of the high voltage and reduce the probability of breakdown of the ultra-thin oxide layer of the floating gate transistor. As a storage tube, the EEPROM device model designed in this paper can work well through the tunnel oxide layer to store data, achieving better storage functions, higher work efficiency, and lower power consumption.

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“…This state is defined as the "0" state. The process of pulling electrons from the floating gate to the drain is defined as writing or programming [13].…”

Section: Eeprom Cell Typesmentioning

confidence: 99%

Structural Design of an Electrically Erasable EEPROM Memory Cell

Zhao¹

2020

WJET

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“…Such memory devices are fundamentally non-volatile, meaning that they retain stored information even in the absence of power [ 1 ]. Compared to traditional silicon-based memory devices such as volatile static random-access memory (SRAM) [ 2 ], dynamic random-access memory (DRAM) [ 3 ], or non-volatile Flash memory [ 4 ] and electrically erasable programmable read-only memory (EEPROM) [ 5 ], ferroelectric memory devices exhibit superior performance in terms of faster read and write speeds, higher endurance, and more prolonged data retention capabilities [ 6 , 7 , 8 , 9 ]. Ferroelectric materials form the core of ferroelectric memory devices and have been intensively researched.…”

Section: Introductionmentioning

confidence: 99%

Perspectives of Ferroelectric Wurtzite AlScN: Material Characteristics, Preparation, and Applications in Advanced Memory Devices

Qin,

He,

Han

et al. 2024

Nanomaterials

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Ferroelectric, phase-change, and magnetic materials are considered promising candidates for advanced memory devices. Under the development dilemma of traditional silicon-based memory devices, ferroelectric materials stand out due to their unique polarization properties and diverse manufacturing techniques. On the occasion of the 100th anniversary of the birth of ferroelectricity, scandium-doped aluminum nitride, which is a different wurtzite structure, was reported to be ferroelectric with a larger coercive, remanent polarization, curie temperature, and a more stable ferroelectric phase. The inherent advantages have attracted widespread attention, promising better performance when used as data storage materials and better meeting the needs of the development of the information age. In this paper, we start from the characteristics and development history of ferroelectric materials, mainly focusing on the characteristics, preparation, and applications in memory devices of ferroelectric wurtzite AlScN. It compares and analyzes the unique advantages of AlScN-based memory devices, aiming to lay a theoretical foundation for the development of advanced memory devices in the future.

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