Electrically driven mid-submicrometre pixelation of InGaN micro-light-emitting diode displays for augmented-reality glasses

Abstract

InGaN-based blue light-emitting diodes (LEDs), with their high efficiency and brightness, are entering the display industry. However, a significant gap remains between the expectation of highly efficient light sources and their experimental realization into tiny pixels for ultrahighdensity displays for augmented reality (AR). Herein, we report using tailored ion implantation (TIIP) to fabricate highly-efficient, electrically-driven pixelated InGaN microLEDs (μLEDs) at the mid-submicron scale (line/space of 0.5/0.5 μm), corresponding to 8500ppi (RGB). Creating a laterally confined nonradiative region around each pixel with controlled amount of mobile vacancies, TIIP pixelation materializes relatively invariant luminance, and high pixel distinctiveness, at submicron-sized pixels. Moreover, with incomparable integration capability of TIIP pixelation owing to its planar geometry, we demonstrate 2000 ppi μLED displays with monolithically integrated thin-film transistor pixel circuits, and 5000 ppi compatible core technologies. We expect that the demonstrated method will pave the way toward highperformance μLED displays for seamless AR glasses in the near future.

InGaN-based red light-emitting diodes: from traditional to micro-LEDs

“…They are expected to have many advantages, such as high brightness levels, a long lifetime, a large modulation bandwidth, and small form factors. 9,72) Therefore, the μLED techniques are regarded to be the most promising for applications of high-resolution displays, 73) visible light communication, 74) and biomedical sensors. 9) One of the key issues for InGaN μLEDs is the reduction of efficiency accompanying a decrease in chip size.…”

Analysis of Size-Dependent Quantum Efficiency in AlGaInP Micro–Light-Emitting Diodes With Consideration for Current Leakage

“…(e-mail: chienchunglin@ntu.edu.tw). of 1 m or smaller have been used [10,11]. Reducing the size of AlGaInP-based materials is difficult because of its high surface recombination and carrier leakage [12][13][14][15].…”

Augmented reality and virtual reality displays: emerging technologies and future perspectives

“…Photolithography is suitable for mass production while electron/ion beam lithography is usually used to create photomask for photolithography or to write structures with nanometer-scale feature size. Recent advances in lithography have enabled engineered structures like optical metasurfaces 45 , SRGs 46 , as well as micro-LED displays 47 . Metasurfaces exhibit a remarkable design freedom by varying the shape of metaatoms, which can be utilized to achieve novel functions like achromatic focus 48 and beam steering 49 .…”