Electrically detected magnetic resonance in ion-implanted Si:P nanostructures

McCamey, Dane R.; Huebl, Hans; Brandt, Martin S.; Hutchison, W. D.; McCallum, Jeffrey C.; Clark, Robert G.; Hamilton, A. R.

doi:10.1063/1.2358928

Cited by 88 publications

(85 citation statements)

References 31 publications

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“…Electrically-detected magnetic resonance (EDMR) of Si:P samples was first observed by Schmidt and Solomon over 50 years ago [15] and has become an important tool for magnetic resonance of donors in micro-and nanoscale * chandrasekhar.ramanathan@dartmouth.edu silicon devices due to its high sensitivity [16,17]. EDMR in Si:P has been used to electrically detect donor spin states [18], and to readout an ensemble nuclear spin memory with extremely long lifetimes (> 100 s) [19].…”

Section: Introductionmentioning

confidence: 99%

“…The influence of this optical excitation on the SDR rates and the observed EDMR signal is still not well understood. While most EDMR experiments have used white light sources for the optical excitation [17,18,26,[28][29][30], light emitting diodes [8,27] and laser excitation [16] have also been used. At cryogenic temperatures the optical penetration depth of light into silicon is known to be strongly wavelength dependent [31].…”

Section: Introductionmentioning

confidence: 99%

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Optical Dependence of Electrically Detected Magnetic Resonance in Lightly Doped Si:P Devices

et al. 2017

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Electrically-detected magnetic resonance (EDMR) provides a highly sensitive method for reading out the state of donor spins in silicon. The technique relies on a spin-dependent recombination (SDR) process involving dopant spins that are coupled to interfacial defect spins near the Si/SiO2 interface. To prevent ionization of the donors, the experiments are performed at cryogenic temperatures and the mobile charge carriers needed are generated via optical excitation. The influence of this optical excitation on the SDR process and the resulting EDMR signal is still not well understood. Here, we use EDMR to characterize changes to both phosphorus and defect spin readout as a function of optical excitation using: a 980 nm laser with energy just above the silicon band edge at cryogenic temperatures; a 405 nm laser to generate hot surface-carriers; and a broadband white light source. EDMR signals are observed from the phosphorus donor and two distinct defect species in all the experiments. With near-infrared excitation, we find that the EDMR signal primarily arises from donor-defect pairs, while at higher photon energies there are significant additional contributions from defect-defect pairs. The optical penetration depth into silicon is also known to be strongly wavelength dependent at cryogenic temperatures. The energy of the optical excitation is observed to strongly modulate the kinetics of the SDR process. Careful tuning of the optical photon energy could therefore be used to control both the subset of spin pairs contributing to the EDMR signal as well as the dynamics of the SDR process.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Optical Dependence of Electrically Detected Magnetic Resonance in Lightly Doped Si:P Devices

et al. 2017

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“…Most of these applications involve electrical transport and spin manipulation at or near the silicon-silicon dioxide (SiO 2 ) interface, making the understanding of spin processes in this region extremely important. Numerous studies of spin-dependent transport and recombination at the interface between c-Si:P and SiO 2 have recently been undertaken, with the aim of identifying and understanding these mechanisms 5,6,7 , and showing that they can be utilized for the observation of very small ensembles of donors 8 and coherent spin motion 7,9 . Additionally, spin dependent transport in two dimensional electron gases at the c-Si/SiO 2 interface has been demonstrated 10,11 .…”

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confidence: 99%

Spin-dependent processes at the crystallineSi-SiO2interface at high magnetic fields

et al. 2008

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An experimental study on the nature of spin-dependent excess charge carrier transitions at the interface between (111) oriented phosphorous doped ([P]≈ 10 15 cm −3 ) crystalline silicon and silicon dioxide at high magnetic field (B 0 ≈ 8.5T) is presented. Electrically detected magnetic resonance (EDMR) spectra of the hyperfine split 31 P donor electron transitions and paramagnetic interface defects were conducted at temperatures in the range 3 K≤ T ≤12 K. The results at these previously unattained (for EDMR) magnetic field strengths reveal the dominance of spin-dependent processes that differ from the previously well investigated recombination between the 31 P donor and the P b state, which dominates at low magnetic fields. While magnetic resonant current responses due to 31 P and P b states are still present, they do not correlate and only the P b contribution can be associated with an interface process due to spin-dependent tunneling between energetically and physically adjacent P b states. This work provides an experimental demonstration of spin-dependent tunneling between physically adjacent and identical electronic states as proposed by Kane for readout of donor qubits. 71.55.Cn, 73.40.Qv Phosphorus doped crystalline silicon (c-Si:P) is one of the most widely utilized semiconductor materials, with applications ranging from conventional microelectronics 1 to proposed and presently widely investigated concepts for spintronics 2 and spin-based quantum information processing (QIP) 3 . Silicon based spin-QIP and spintronics concepts aim to utilize the comparatively weak spin-orbit coupling present in this material, and the correspondingly very long spincoherence times 2,3 , as well as the impact of spin-selection rules on electronic transitions which can be used for spin readout 4 . Most of these applications involve electrical transport and spin manipulation at or near the silicon-silicon dioxide (SiO 2 ) interface, making the understanding of spin processes in this region extremely important. Numerous studies of spin-dependent transport and recombination at the interface between c-Si:P and SiO 2 have recently been undertaken, with the aim of identifying and understanding these mechanisms 5,6,7 , and showing that they can be utilized for the observation of very small ensembles of donors 8 and coherent spin motion 7,9 . Additionally, spin dependent transport in two dimensional electron gases at the c-Si/SiO 2 interface has been demonstrated 10,11 . However, no systematic study of such processes at high magnetic field has been conducted to date, with the only data at magnetic fields B 0 > 400 mT given by a single electrically detected magnetic resonance (EDMR) spectrum recorded at B 0 = 7.1 T and a temperature T = 4 K 12 .In the following, a systematic investigation of the spin dependent processes at the interface between c-Si:P and SiO 2 are presented for high magnetic fields (B 0 ≈ 8.5 T) at temperatures in the range 3 K≤ T ≤12 K.We show that the dominant spin-dependent recombination mechanism at low magnet...

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“…Since Kane's original proposal [27], Si:P single crystals have become a promising spin qubit system for its long coherence times [28], the possibility of single-spin detection by electrical measurements [29][30][31][32], and mature material and fabrication technologies. The basic unit of the qubit ensemble in Si:P crystals consists of an unpaired electron spin along with a nuclear spin of 31 P. At low temperatures, the electron is bound to the phosphorus nucleus and there is an isotropic hyperfine coupling [33] between the electron and nuclear spin.…”

Section: Dynamical Decoupling In Phosphorous-doped Silicon (Si:p)mentioning

confidence: 99%

Dynamical decoupling of electron spins in phosphorus-doped silicon

et al. 2011

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Quantum coherence is an important enabling feature underpinning quantum computation. However, because of couplings with its noisy surrounding environment, qubits suffer from the decoherence effects. The dynamical decoupling (DD) technique uses pulse-induced qubit flips to effectively mitigate couplings between qubits and environment. Optimal DD eliminates dephasing up to a given order with the minimum number of pulses. In this paper, we first introduce our recent work on prolonging electron spin coherence in γ-irradiated malonic acid crystals and analyze different decoherence mechanisms in this solid system. Then we focus on electron spin relaxation properties in another system, phosphorous-doped silicon (Si:P) crystals. These properties have been investigated by pulse electron paramagnetic resonance (EPR). We also investigate the performance of the dynamical decoupling technique on this system. Using 8-pulse periodic DD, the coherence time can be extended to 296 μs compared with 112 μs with one-pulse control. decoherence, dynamical decoupling, quantum computation Citation:Rong X, Wang Y, Yang J H, et al. sequence was discovered by Uhrig to suppress pure dephasing of a single qubit coupled to a boson bath with a hard frequency cutoff [14]. This Uhrig dynamical decoupling (UDD) was later conjectured [15] and rigorously proved to be model-independent [16]. The first experimental study of UDD was conducted using trapped ions with ambient noise mimicked by modulating the controlling system [17]. In our recent experiment [23], we demonstrated extended coherence of electron spins in a solid system, specifically, radial electron spins in γ-irradiated malonic acid crystals, with UDD from 50 K through to room temperature. This optimal dynamical decoupling can also be applied to other solid-state systems, such as diamond with nitrogenvacancy centers which have also been realized in recent works [18][19][20]. In this paper, we report on the investigations into relaxation properties of phosphorous-doped silicon crystals lauded as an attractive candidate for spin-based quantum computing. We also investigated the performance of periodic dynamical decoupling (PDD) in this system. The

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Electrically detected magnetic resonance in ion-implanted Si:P nanostructures

Cited by 88 publications

References 31 publications

Optical Dependence of Electrically Detected Magnetic Resonance in Lightly Doped Si:P Devices

Optical Dependence of Electrically Detected Magnetic Resonance in Lightly Doped Si:P Devices

Spin-dependent processes at the crystallineSi-SiO2interface at high magnetic fields

Dynamical decoupling of electron spins in phosphorus-doped silicon

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